Semiconductor device < Semiconductor device manufacture < Semiconductor device measurement

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
001228 (2001)		InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm
001448 (2000)		Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
001453 (2000)		Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001634 (1999)		Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001700 (1999)		Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001757 (1999)		Cu(In,Ga)Se2 solar cells: device stability based on chemical flexibility
001775 (1999)		Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm
001787 (1999)		0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001917 (1998)		Theoretical analysis of kink effect in C-V characteristics of indium-implanted NMOS capacitors
001934 (1998)		Step-like heterostructure barrier varactor
001994 (1998)		Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001A25 (1998)		Capacitance engineering for InP-based heterostructure barrier varactor
001C14 (1997)		Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
001C22 (1997)		Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001C42 (1997)		Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of Schottky diodes
001C97 (1997)		Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax
001D07 (1997)		Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D20 (1997)		20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications
001F10 (1996)		Low excess noise of InAlAs/InP HFETs fabricated using selective dry recess etching
001F61 (1996)		Deep levels in Au-POxNyHz-(n)InP MIS structures

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