Semiconductor detectors < Semiconductor device < Semiconductor device manufacture

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List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000035 (2013)		Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
000603 (2008)		Andreev Reflection versus Coulomb Blockade in Hybrid Semiconductor Nanowire Devices
000872 (2005)		Three-dimensional calculation of propagation losses in photonic crystal waveguides
000D46 (2003)		Infrared photodetection with semiconductor self-assembled quantum dots
001298 (2000-12)		InAsSb sur GaSb : un matériau pour la détection infrarouge à température ambiante
001438 (2000)		Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures
001509 (1999-12)		Conception, réalisation technologique sur InP et caractérisation d'une source d'émission multi-longueurs d'onde pour les applications WDM à 1.5μm
001F51 (1996)		Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview
002330 (1994-01)		Caractérisation optique de micro-structures III-V contraintes
002335 (1994)		Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002337 (1994)		Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs
002350 (1994)		Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002359 (1994)		Sensitivity to electrostatic discharges of low-cost' 1.3 μm laser diodes: a comparative study
002367 (1994)		Photon tunneling from semiconductor surfaces to atomic forcxe microscopy probes
002378 (1994)		Microwave components and subassemblies for millimeter wave applications
002386 (1994)		Low temperature low voltage operation of HEMTs on InP
002400 (1994)		High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002403 (1994)		Grating fabrication anc characterization method for wafers up to 2 in
002405 (1994)		GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002549 (1993)		Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
002584 (1993)		Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

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