Semiconducting indium compounds < Semiconducting indium gallium arsenide < Semiconducting indium phosphide

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000B23 (2004)		Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
000B75 (2004)		Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
000D01 (2003)		Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors
000D04 (2003)		Regeneration capabilities of passive saturable absorber-based optical 2R in 20Gbit/s RZ DWDM long-haul transmissions
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
001031 (2002)		DOS optical switch for microwave optical links based applications
001228 (2001)		InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm
001232 (2001)		InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001289 (2001)		3.6-Mhz linewidth 1.55-μm monomode vertical-cavity surface-emitting laser
001410 (2000)		Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001425 (2000)		Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
001464 (2000)		Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction
001472 (2000)		Complex-coupled DFB lasers: advantages and drawbacks of gain and radiation loss grating
001473 (2000)		Complex current gain and cutoff frequency determination of HBTs
001494 (2000)		0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001634 (1999)		Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001700 (1999)		Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001783 (1999)		2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
001787 (1999)		0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer

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