Semiconducting indium < Semiconducting indium compounds < Semiconducting indium gallium arsenide

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List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000B03 (2004)		Optimization of InP-InGaAs HPT gain: Design of an opto-microwave monolithic amplifier
000D52 (2003)		InAs/AlSb quantum cascade lasers operating at 6.7 μm
000D59 (2003)		High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
000E01 (2003)		Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001004 (2002)		High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001054 (2002)		48 Gbit/s InP DHBT MS-DFF with very low time jitter
001056 (2002)		2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback
001057 (2002)		0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001179 (2001)		Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection
001372 (2000)		Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001413 (2000)		Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
001431 (2000)		Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001435 (2000)		InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
001448 (2000)		Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
001493 (2000)		0.7W in singlemode fibre from 1.48μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
001636 (1999)		Transferred InP-based HBVs on glass substrate
001704 (1999)		MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001727 (1999)		High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001994 (1998)		Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001999 (1998)		High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

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