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Semiconducting gallium arsenide < Semiconducting gallium compounds < Semiconducting gallium indium nitride arsenide  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000D59 (2003) High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
000D90 (2003) Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
001287 (2001) A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001413 (2000) Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
001446 (2000) Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001C37 (1997) Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature
001C44 (1997) Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
001C56 (1997) InP/GaInAsP &pgr;-phase-shifted Mach-Zehnder modulator for wavelength independent (1530-1560 nm) propagation performance at 10 Gbit/s over standard dispersive fibre
001C67 (1997) High power operation of widely tunable 1.55μm distributed Bragg reflecto laser
001E78 (1996) Short period superlattices under hydrostatic pressure
001F04 (1996) Modeling of microwave top illuminated PIN photodetector under very high optical power
001F08 (1996) Low noise 20Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers
001F21 (1996) Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
001F31 (1996) High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer
001F55 (1996) Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

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