Semiconducting films < Semiconducting gallium arsenide < Semiconducting gallium compounds

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List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000B39 (2004)		InAlAs-InGaAs double-gate HEMTs on transferred substrate
000B95 (2004)		9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000E01 (2003)		Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001006 (2002)		High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001025 (2002)		Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution
001431 (2000)		Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001443 (2000)		High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
001453 (2000)		Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001664 (1999)		Smart-Cut process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
001670 (1999)		Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001673 (1999)		Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
001715 (1999)		Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001727 (1999)		High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001775 (1999)		Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm
001785 (1999)		1-m W CW-RT monolithic VCSEL at 1.55 μm
001786 (1999)		0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001943 (1998)		Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001969 (1998)		New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001997 (1998)		High power added efficiency at 35GHz on InP DH HEMTs
001999 (1998)		High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

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