Secondary ion mass spectra < Secondary ion mass spectrometry < Sediments

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 41.
[0-20] [0 - 20][0 - 41][20-40]

Ident.	Authors (with country if any)	Title
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000199 (2011)		M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices
000297 (2010)		Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000321 (2010)		Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
000433 (2009)		Initial transient in Zn-doped InSb grown in microgravity
000481 (2008)		n-type phosphorus-doped polycrystalline diamond on silicon substrates
000509 (2008)		Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station
000571 (2008)		HgCdTe FPAs made by Arsenic-ion implantation
000D90 (2003)		Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
001160 (2001)		Sol-gel deposition of electrochromic WO3 thin film on flexible ITO/PET substrate
001236 (2001)		Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
002562 (1993)		Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers
002638 (1993)		Intermixing of GaInP/GaAs multiple quantum wells
002695 (1993)		Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD
002705 (1993)		Diffusion of Zn across p-n junctions in Ga0.47In0.53As
002708 (1993)		Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions
002725 (1993)		Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002855 (1992)		Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002871 (1992)		Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy : uniformly and planar-doped layers, quantum wells, and superlattices
002874 (1992)		InGaSb/GaSb photodiodes growth by MOVPE
002A19 (1991)		Hydrogenation of InAs on GaAs heterostructures

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Secondary ion mass spectrometry" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Secondary ion mass spectrometry" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Secondary ion mass spectrometry
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024