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Index « Keywords » - entrée « Photoreflectance »
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Photoreceptor < Photoreflectance < Photorefractive crystal  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000241 (2011) Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission
000288 (2010) Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials
000412 (2009) Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000458 (2009) Electronic structure properties of the In(Ga)As/GaAs quantum dot-quantum well tunnel-injection system
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000785 (2006) Photoreflectance study at the micrometer scale
000786 (2006) Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000D93 (2003) Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
001138 (2001) Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001265 (2001) Dual contribution to the stokes shift in InGaN-GaN Quantum wells
001310 (2000-10-15) Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy
001461 (2000) Effect of pressure on direct optical transitions of γ-InSe
001582 (1999-04-15) Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
001808 (1998-11-01) Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces
001919 (1998) The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers

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