Operating conditions < Operating mode < Operation study

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List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000D12 (2003)		Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000D42 (2003)		Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D56 (2003)		ITO-on-top organic light-emitting devices: a correlated study of opto-electronic and structural characteristics
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
001439 (2000)		Hybrid photovoltaic structures based on polymer/chemically grown cadmium selenide films : effect of silicotungstic acid on the junction properties
001480 (2000)		Bridgman growth without crucible contact using the dewetting phenomenon
001668 (1999)		Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001725 (1999)		Highly strained InxGa1-xAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 μm spectral range
001762 (1999)		Chemical segregation in vertical bridgman growth of GaInSb alloys
001813 (1998-11)		Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures
001953 (1998)		Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001A20 (1998)		CuInSe2 thin films grown by MOCVD : characterization, first devices
001A27 (1998)		Bridgman solidification of GaSb in space
001C11 (1997)		Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001D06 (1997)		Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images
001D10 (1997)		As surface segregation during the growth of GaInP on GaAs
001D19 (1997)		2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy
001F49 (1996)		Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy
001F88 (1995-12)		Silicium déposé par L.P.C.V.D. et dopé in-situ: dépôt, caractérisation et application
002047 (1995-06)		Mise au point du procédé d'élaboration de matériaux semiconducteurs et d'hétérostructures III-V basées sur GaAs, Ga(1-y)A1xAs, G2(1-x)InxAs
002127 (1995)		Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures

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