Open systems < Operating conditions < Operating mode

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000086 (2012)		Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000120 (2012)		InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000123 (2012)		Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
000506 (2008)		Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates
000522 (2008)		Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
000541 (2008)		Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000589 (2008)		Demonstration of planar thick InP layers by selective MOVPE
000616 (2007)		Thermodynamic and experimental study of chemical bath deposition of Zn(S, O, OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S, Se)2 absorbers
001214 (2001)		Isobutane dehydrogenation in a membrane reactor influence of the operating conditions on the performance
001250 (2001)		Evaluation of atmospheric pollution by two semiconductor gas sensors
001C88 (1997)		Effect of copper coating on the behaviour of p-InP electrodes
001E57 (1996)		Dépôt électrochimique d'un semi-conducteur ternaire : le diséléniure de cuivre et d'indium (CuInSe2)
001E82 (1996)		Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs : a complementary study
002131 (1995)		Properties of thermally annealed undoped and sulphur doped InP wafers
002339 (1994)		X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In2Se3 thin films grown by molecular beam deposition
002342 (1994)		Thermodynamical study of the preparation of CuInSe2 thin films in vertical closed tube systems
002918 (1992)		Crystal growth by THM of CdIn2Te4 and chemical characterization
002D35 (1988)		The effect of the plasma characteristics upon electrical properties of InP oxide obtained in an oxygen plasma
003056 (1985)		Etude des matériaux spécifiques, l'épitaxie de semi-conducteurs composés et l'adaptation du masquage électronique à la WSI. Thème 2: épitaxie d'arséniure de gallium sur silicium

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