Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000031 (2013) Phosphazene like film formation on InP in liquid ammonia (223 K)
000147 (2011) Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000190 (2011) Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodes
000246 (2011) Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
000325 (2010) Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000341 (2010) Dark Current and noise measurements in InAs/GaSb Superlattice Detectors
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000632 (2007) Self-assembly monolayer of anatase titanium oxide from solution process on indium tin oxide glass substrate for polymer photovoltaic cells
000669 (2007) Interface analysis of InAs/GaSb superlattice grown by MBE
000A24 (2004-06-01) Study of thiol-induced adhesion of stressed III-V semiconductor on wax using thin film elastic relaxation
000C45 (2003-04-14) Self-assembled molecular chains formed by selective adsorption of lead-phthalocyanine on InSb(100)-(4×2)/c(8×2)
000E42 (2002-08-05) Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments
001212 (2001) Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
001280 (2001) Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells
001419 (2000) Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
001535 (1999-09-15) Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
001835 (1998-09) Role of Te on the morphology of InAs self-assembled islands
001E72 (1996) Structural aspects of the growth of InAs islands on InP substrate
002007 (1995-10-15) Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition
002052 (1995-05-15) Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100)

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