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Index « Keywords » - entrée « Molecular beam epitaxy »
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Molecular beam condensation < Molecular beam epitaxy < Molecular beams  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 363.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000006 (2013) Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin
000034 (2013) Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell
000051 (2013) InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
000059 (2013) Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000078 (2013) (112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum
000093 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000094 (2012) Structure and strain state of polar and semipolar InGaN quantum dots
000097 (2012) Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000112 (2012) Morphology and origin of V-defects in semipolar (11-22) InGaN
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000117 (2012) Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells : Indium Nitride and Related Alloys
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000132 (2012) E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
000147 (2011) Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide
000175 (2011) Status of p-on-n Arsenic-Implanted HgCdTe Technologies
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000198 (2011) MCT IR detectors in France
000205 (2011) Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000217 (2011) Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots

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