Indium phosphide < Indium phosphides < Indium selenides

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List of bibliographic references

Number of relevant bibliographic references: 452.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000617 (2007)		Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000629 (2007)		Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence x-ray techniques
000643 (2007)		Optical tuning of planar photonic crystals infiltrated with organic molecules
000652 (2007)		New porosification of n-InP and n-GaAs in acidic liquid ammonia at 223 K: unusual morphologies associated to distinguished electrochemical behaviours
000654 (2007)		Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000657 (2007)		Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007)		Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000666 (2007)		MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000667 (2007)		Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000682 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000687 (2007)		Electrooptic properties of InGaAsP asymmetric double quantum wells : Enhanced slope efficiency in waveguide electroabsorption modulators
000708 (2007)		Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000711 (2007)		Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)- : Effect of annealing at 450 °C
000713 (2007)		Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000724 (2007)		Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
000725 (2007)		Analysis of the double laser emission occurring in 1.55-μm InAs-InP (113)B quantum-dot lasers
000729 (2007)		All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation
000734 (2007)		1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000735 (2007)		1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000738 (2006)		Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000739 (2006)		Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide

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