Serveur d'exploration sur l'Indium - Analysis (France)

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Indium phosphates < Indium phosphide < Indium phosphides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 175.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000000 (2014) Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
000005 (2014) Backgating effect in III-V MESFET's: A physical model
000008 (2013) Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals
000012 (2013) Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000019 (2013) Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
000021 (2013) Stability of InP oxide versus solvated electrons in liquid ammonia
000023 (2013) Spatial modulation of above-the-gap cathodoluminescence in InP nanowires
000027 (2013) Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
000031 (2013) Phosphazene like film formation on InP in liquid ammonia (223 K)
000035 (2013) Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
000045 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000051 (2013) InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
000052 (2013) InAs/AISb quantum cascade lasers operating near 20 μm
000059 (2013) Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor
000064 (2013) Efficiency limits of laser power converters for optical power transfer applications
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000076 (2013) 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
000083 (2012) Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

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