High electron mobility transistor < High electron mobility transistors < High energy

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 45.
[0-20] [0 - 20][0 - 45][20-40]

Ident.	Authors (with country if any)	Title
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
000318 (2010)		Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000598 (2008)		Ballistic nanodevices for high frequency applications
000672 (2007)		Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000877 (2005)		Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000A39 (2004-03-29)		Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000B39 (2004)		InAlAs-InGaAs double-gate HEMTs on transferred substrate
000B78 (2004)		Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000C47 (2003-04-01)		Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001032 (2002)		DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001057 (2002)		0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001059 (2001-12-01)		Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001216 (2001)		Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits
001251 (2001)		Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001287 (2001)		A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001322 (2000-09)		Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001343 (2000-03-01)		Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001431 (2000)		Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "High electron mobility transistors" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "High electron mobility transistors" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    High electron mobility transistors
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024