High efficiency < High electron mobility transistor < High electron mobility transistors

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List of bibliographic references

Number of relevant bibliographic references: 83.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000028 (2013)		Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000036 (2013)		Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers
000083 (2012)		Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000088 (2012)		The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys
000210 (2011)		InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
000221 (2011)		Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000495 (2008)		Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000656 (2007)		Nanometer transistors for emission and detection of THz radiation
000730 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000733 (2007)		A 200-GHz true E-mode low-noise MHEMT
000903 (2005)		Physical study of the avalanche breakdown phenomenon in HEMTs
000906 (2005)		Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems
000954 (2005)		High performances of InP channel power HEMT at 94 GHz
000A14 (2005)		As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000A22 (2005)		94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000B38 (2004)		InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B74 (2004)		Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000D34 (2003)		Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000D47 (2003)		Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
000F03 (2002)		Subterahertz detection by high electron mobility transistors at large forward gate bias
000F97 (2002)		InP and related alloys for electronic devices : Croissance épitaxiale en phase vapeur aux organométalliques

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