Heterojunction transistor < Heterojunctions < Heteronuclear complex

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List of bibliographic references

Number of relevant bibliographic references: 134.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000068 (2013)		Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
000106 (2012)		Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000162 (2011)		Systematic study of the complex structure of N1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions
000348 (2010)		Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques
000378 (2009)		Thickness dependent physical properties of close space evaporated In2S3 films
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000A62 (2004)		Time dependence of directive channelling in photonic crystal based multiport devices
000B03 (2004)		Optimization of InP-InGaAs HPT gain: Design of an opto-microwave monolithic amplifier
000B78 (2004)		Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000C72 (2003)		Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
000C96 (2003)		Strategy for the design of a non-cryogenic quantum infrared detector
000D16 (2003)		Optimization, design and fabrication of a non-cryogenic quantum infrared detector
000D34 (2003)		Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000D42 (2003)		Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D49 (2003)		Indium surface segregation in AlSb and GaSb
000D65 (2003)		Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000D72 (2003)		Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000E00 (2003)		Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
000E06 (2003)		An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001013 (2002)		Formation of 3D InAs quantum dots on InP substrate

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