Growth mechanism < Growth rate < Growth rate stability

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000088 (2012)		The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys
000123 (2012)		Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
000155 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000273 (2010)		Recent advances in the MOVPE growth of indium nitride
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
000506 (2008)		Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates
000522 (2008)		Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
000526 (2008)		One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000589 (2008)		Demonstration of planar thick InP layers by selective MOVPE
000678 (2007)		Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000679 (2007)		Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
000944 (2005)		Interfacial interaction of solid nickel with liquid bismuth and Bi-base alloys
000953 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000957 (2005)		Growth of concentrated GaInSb alloys with improved chemical homogeneity at low and variable pulling rates
000B46 (2004)		Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD)
000B70 (2004)		Comparative study of LPE and VPE silicon thin film on porous sacrificial layer
001C84 (1997)		Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
002023 (1995-09-01)		Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures
002287 (1994-05-16)		Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy
002307 (1994-03-14)		Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium

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