Growth interface < Growth mechanism < Growth rate

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 129.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000006 (2013)		Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin
000025 (2013)		Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000047 (2013)		Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
000051 (2013)		InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
000068 (2013)		Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
000078 (2013)		(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum
000082 (2012)		Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000111 (2012)		Morphology control and growth dynamics of in-plane solid-liquid-solid silicon nanowires
000113 (2012)		Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000120 (2012)		InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000127 (2012)		Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000142 (2012)		A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
000147 (2011)		Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide
000155 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000174 (2011)		Structural analysis of site-controlled InAs/InP quantum dots
000175 (2011)		Status of p-on-n Arsenic-Implanted HgCdTe Technologies
000177 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000216 (2011)		Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

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