Serveur d'exploration sur l'Indium - Analysis (France)

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Deep energy levels < Deep level < Deep level optical spectrometry  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]
Ident.Authors (with country if any)Title
000005 (2014) Backgating effect in III-V MESFET's: A physical model
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000238 (2011) Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000816 (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000C74 (2003) Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
000D14 (2003) Photo-induced transient spectroscopy of defect levels in GaInNAs
001001 (2002) Implant and characterization of highly concentrated Fe deep centers in InP
001036 (2002) Compared rapid thermal annealing procedures of InP
001686 (1999) Optical characterization of bulk CuIn3Se5
001795 (1998-12) ETUDE DES EFFETS PARASITES DANS LES TRANSISTORS A EFFET DE CHAMP A HETEROJONCTION (HFET) SUR SUBSTRAT InP
001852 (1998-07) Caractérisation électrique du quaternaire (Ga0.47 In0.53As)1-x (Al0.48In0.52As)x (x=30%) et Application au transistor HFET pour la photodétection à 1,3-1.55μm.
001970 (1998) Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
001D53 (1996-10) Contribution à l'étude des propriétés électroniques de puits quantiques contraints InAs/InP et non contraints Ga0,47 In0,53 As/InP par mesures capacitives statiques et dynamiques
002139 (1995) Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer
002294 (1994-05) Optimisation des conditions du Recuit Rapide Isotherme sur substrats InP encapsulés InGaAs pour application aux composants avancés
002426 (1994) Deep-level characterization of AlxIn1-xAs layers grown by low pressure metal-organic chemical vapor deposition
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002735 (1993) Behavior of InP:Fe under high electric field
002824 (1992) Passivation induced deep levels in GaInAs PIN planar photodiodes
002927 (1992) Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy

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