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Index « Keywords » - entrée « Chemical beam epitaxy »
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Chemical beam condensation < Chemical beam epitaxy < Chemical beam etching  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]
Ident.Authors (with country if any)Title
000629 (2007) Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence x-ray techniques
000C65 (2003-01-01) Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
001092 (2001-07) Growth and characterization of GaInNAs/GaAs multiquantum wells
001101 (2001-05-07) Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy
001109 (2001-03-19) Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001133 (2001) Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001234 (2001) In situ etching at InGaAs/GaAs quantum well interfaces
001310 (2000-10-15) Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy
001350 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001351 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001557 (1999-06-28) An efficient way to improve compositional abruptness at the GaAs on GaInAs interface
001568 (1999-05-31) Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22) Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001596 (1999-02) Epitaxie par jets chimiques : application à la croissance de structures mixtes arséniures-phosphures et de nitrures d'éléments III
001621 (1999) Transistors et circuits intégrés à hétérostructures (III-V)
001737 (1999) Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction
001820 (1998-10-15) Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
001837 (1998-08-15) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
001881 (1998-03-02) Direct and inverse equivalent InAlAs-InP interfaces grown by gas-source molecular beam epitaxy
001892 (1998-01-15) Structural and optical investigation of InAsxP1-x/InP strained superlattices

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