CPA calculations < CV characteristic < CVD

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000162 (2011)		Systematic study of the complex structure of N1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions
000170 (2011)		Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect
000238 (2011)		Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000558 (2008)		Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
000613 (2007)		Transport mechanism and trap distribution in ITO/azo-calix[4]arene derivative/al diode structure
000982 (2005)		Electrical properties of doped 3-tetradecylpolypyrrole/metal devices
000C89 (2003)		Study and improvement of interfacial properties in a MIS structure based on p-type InP
001036 (2002)		Compared rapid thermal annealing procedures of InP
001273 (2001)		Charge-carrier injection via semiconducting electrodes into semiconducting/electroluminescent polymers
001485 (2000)		Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity
001744 (1999)		Electrical study of the Au/InSb/InP system
001748 (1999)		Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures
001766 (1999)		Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well
001935 (1998)		Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurements
001960 (1998)		Passivation of III-V compounds used for metal-insulator, InP(100) structures
001970 (1998)		Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
001A14 (1998)		Electrical properties of MIS structures with BN insulating layer
001B65 (1997)		Mise en évidence des défauts profonds dans des structures MIS : Au-PoxNyInz-(n)InP par la méthode FTDLTS
001C20 (1997)		Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
001C38 (1997)		Metal-n-InP Rectifying properties enhancement with Zn based metallizations and diffusion at moderate annealing temperatures

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