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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. Cuminal »
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Y. Crosnier < Y. Cuminal < Y. D. Seropegin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000475 (2009) A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000531 (2008) Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
000561 (2008) InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
001237 (2001) Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics
001593 (1999-02-01) Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
001669 (1999) Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes
001976 (1998) Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001A98 (1997-08-11) Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
001F52 (1996) Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Quantum well lasers
4Experimental study
4Laser diodes
4Semiconductor lasers
3Binary compounds
3Gallium antimonides
3Threshold current
2Ambient temperature
2Current density
2Electroluminescence
2Gallium compounds
2III-V semiconductors
2Indium Arsenides
2Indium antimonides
2Indium arsenides
2Indium compounds
2Nitrides
2Quantum wells
2Strained quantum well
2Temperature dependence
1Aluminium antimonides
1Arrhenius equation
1Auger recombination
1Band offset
1Band structure
1Barrier height
1Binary compound
1Carrier density
1Charge carrier injection
1Conduction bands
1Dispersion relations
1Effective mass model
1Electrochemical sensors
1Electronic structure
1Energy gap
1Experiments
1Fabrication
1Gallium Antimonides
1Gallium arsenides
1III-V compound
1Indium Antimonides
1Infrared laser
1Infrared radiation
1Injection lasers
1Interface states
1Laser materials
1Leakage currents
1Light emitting diodes
1Microelectronic processing
1Mid infrared radiation
1Molecular beam condensation
1Molecular beam epitaxy
1Multiple quantum well
1Nitrogen
1Nitrogen additions
1Nitrogen oxides
1Numerical method
1Optical amplification
1Optical gain
1Optical losses
1Optical materials
1Optical properties
1Output power
1Performance
1Photoluminescence
1Quaternary compounds
1Radiative recombination
1Ridge waveguides
1Schottky barrier diodes
1Semiconducting indium phosphide
1Semiconductor growth
1Semiconductor materials
1Semiconductor quantum wells
1Spontaneous emission
1Strains
1TE mode
1TM mode
1Temperature effect
1Ternary compound
1Ternary compounds
1Theoretical study
1Theory
1Thermal characteristic
1Thickness
1Thin film devices
1Transition elements
1Waveguide lasers

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