IndiumV3, France, Analysis, indexItem, Author.i, Y. Crosnier

Y. Cordiere < Y. Crosnier < Y. Cuminal

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.

Ident.	Authors (with country if any)	Title
001441 (2000)		High-power GaN MESFET on sapphire substrate
001494 (2000)		0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001715 (1999)		Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001726 (1999)		High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001786 (1999)		0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001787 (1999)		0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001788 (1999)		0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001884 (1998-03)		Bromine/methanol wet chemical etching of via holes for InP microwave devices
001898 (1998-01)		Nonselective wet chemical etching of GaAs and AlGaInP for device applications
001991 (1998)		InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001997 (1998)		High power added efficiency at 35GHz on InP DH HEMTs
001A29 (1998)		Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
001B70 (1997)		Etude de la détermination de schémas équivalents de transistors sur InP pour la conception d'amplificateurs de puissance à 60 GHz
002451 (1994)		1W/mm power pseudomorphic HFET with optimised recess technology
002727 (1993)		Characterization of GaAs and InGaAs double-quantum well heterostructure FET's
002B82 (1990)		Depletion and enhancement modes in InP MISFETs for power amplification

List of associated KwdEn.i

Nombre de documents	Descripteur
7	Current density
7	High electron mobility transistors
5	Experimental study
5	Molecular beam epitaxy
5	Semiconductor doping
4	Experiments
4	Gallium Arsenides
4	High electron mobility transistor
4	III-V compound
4	Indium Phosphides
4	Semiconducting indium gallium arsenide
4	Transconductance
3	Electron transport properties
3	Etching
3	Field effect transistor
3	Indium Arsenides
3	Semiconducting gallium arsenide
3	Ternary compound
3	Theory
2	Composition effects
2	Dislocations (crystals)
2	Gallium arsenides
2	Heterojunction transistor
2	Heterojunctions
2	High power
2	III-V semiconductors
2	Indium aluminum arsenide
2	Indium compounds
2	Microwave circuit
2	Ohmic contacts
2	Optimization
2	Power amplifier
2	Power gain
2	Power transistor
2	Quantum well
2	Semiconducting aluminum compounds
2	Semiconducting indium phosphide
2	Semiconductor growth
2	Substrates
1	Aluminium Arsenides
1	Aluminium compounds
1	Aluminum
1	Binary compound
1	Breakdown voltage
1	Carrier concentration
1	Carrier mobility
1	Current gain
1	Current voltage characteristics
1	Depletion layer
1	Double heterojunction metamorphic high electron mobility transistors
1	Electric breakdown
1	Electric breakdown of solids
1	Electric potential
1	Electric power measurement
1	Electrical characteristic
1	Epilayers
1	Equivalent circuit
1	Equivalent circuits
1	Field effect MMIC
1	Frequencies
1	GHz range
1	GSMBE method
1	Gallium Indium Arsenides Mixed
1	Gallium Phosphides
1	Gallium compounds
1	Gallium nitride
1	Gas source molecular beam epitaxy
1	Gates (transistor)
1	Heterojunction
1	Indium phosphide
1	Integrated circuit
1	Interfaces (materials)
1	Inverse step metamorphic buffers
1	Losses
1	MIS transistor
1	MOSFET
1	Measurement
1	Metal semiconductor field effect transistor
1	Metamorphic buffer layers
1	Microelectronic fabrication
1	Microstrip lines
1	Microwave amplifier
1	Microwave power transistors
1	Monolithic integrated circuit
1	Ohmic contact
1	Performance characteristic
1	Performance evaluation
1	Power added efficiency
1	Power added efficiency (PAE)
1	Power density
1	Production process
1	Relaxation processes
1	Sapphire
1	Schottky barrier diodes
1	Semiconducting indium
1	Semiconductor device
1	Semiconductor device manufacture
1	Semiconductor device structures
1	Semiconductor superlattices
1	Semiconductor technology

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "Y. Crosnier"

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "Y. Crosnier" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Y. Crosnier
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium - Analysis (France) Index « Auteurs » - entrée « Y. Crosnier »
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « Y. Crosnier »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. Crosnier »