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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. L. Delage »
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S. L. Danielsen < S. L. Delage < S. L. Feng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000E36 (2002-09-01) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
000E86 (2002) Transistors Bipolaires à hétérojonction sur substrat GaAs : Résultats de fiabilité et circuits intégrés monolithiques : Croissance épitaxiale en phase vapeur aux organométalliques
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001727 (1999) High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001B60 (1997) Propriétés en bruit basse fréquence des DHBT's GaInP/GaAs/GaInP
001B74 (1997) Conception d'un oscillateur H.B.T. GaInP/GaAs très faible bruit de phase : -124 dBc/Hz à 10 KHz en bande C
001C97 (1997) Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax
001D02 (1997) Boron implantation into GaAs/Ga0.5In0.5P heterostructures
002121 (1995) Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies
002335 (1994) Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002709 (1993) Defects in epitaxial Si-doped GaInP
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002851 (1992) Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
002A30 (1991) First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Heterojunction transistor
6Experimental study
6Gallium Arsenides
6Ternary compound
5Binary compound
5Bipolar transistor
5Gallium arsenides
4Heterojunction bipolar transistors
4III-V compound
3Annealing
3Gallium Indium Phosphides Mixed
3Gallium Phosphides
3Gallium phosphide
3Indium Phosphides
3Indium phosphide
3Microelectronic fabrication
3Transistor
21/f noise
2Characterization
2Charge carriers
2Current gain
2DLTS
2Electric breakdown of solids
2Epitaxy
2Gallium phosphides
2Indium phosphides
2Ion implantation
2Microwave oscillator
2Microwave transistor
2Monolithic integrated circuit
2Secondary ion mass spectrometry
2Semiconducting gallium arsenide
2Semiconductor device
2Semiconductor materials
2Ternary compounds
2X ray diffraction
1Binary compounds
1Boron
1Boron additions
1Boron implantation
1CV characteristic
1Carbon addition
1Carrier density
1Charge carrier recombination
1Chemical beam condensation
1Chemical vapor deposition
1Concentration distribution
1Congress
1Cross sections
1Defect states
1Degradation
1Donors
1Doped materials
1Doping
1Double heterojunction
1Electric conductivity
1Electric field effects
1Electrical properties
1Electron injection
1Electron traps
1Energy gap
1Epitaxial film
1Equivalent circuit
1Experiments
1Frequency response
1Gallium Indium Phosphorus Mixed
1Gallium compounds
1Growth from vapor
1Growth mechanism
1Heterojunction
1Heterojunctions
1Heterostructures
1Hydrogenation
1III-V semiconductors
1IV characteristic
1Indium compounds
1Interface states
1Ionization potential
1Leakage current
1Low noise circuit
1Low pressure
1MOCVD coatings
1Manufacturing process
1Microelectronics
1Microwave circuit
1Microwave device
1Mismatch lattice
1Multiple layer
1Noise spectrum
1Organometallic compound
1Parameter extraction
1Performance
1Performance characteristic
1Phase noise
1Photoconductivity
1Power amplifier
1Power gain
1Power transistor
1Reliability
1Review

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