IndiumV3, France, Analysis, indexItem, Author.i, P. Legay

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
001590 (1999-02-15)		Oxide confining layer on an InP substrate
001704 (1999)		MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001B13 (1997-07)		Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001C93 (1997)		Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001D85 (1996-06-24)		p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001F71 (1996)		Benefits of chemical beam epitaxy for micro and optoelectronic applications
002045 (1995-06-15)		Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002102 (1995)		Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002192 (1995)		Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002370 (1994)		Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures

List of associated KwdEn.i

Nombre de documents	Descripteur
6	Experimental study
5	Indium phosphides
4	Gallium arsenides
3	Binary compounds
3	Crystal growth from vapors
3	Epitaxy
3	Gallium phosphides
3	III-V semiconductors
3	Refractive index
3	Semiconductor lasers
3	Ternary compounds
2	Brillouin effect
2	Chemical beam condensation
2	Ellipsometry
2	Epitaxial layers
2	III-V compound
2	Indium compounds
2	Microelectronic fabrication
2	Oxidation
2	Selective area
2	Semiconductor materials
2	Substrates
1	Absorption
1	Acoustic properties
1	Aluminium Arsenides
1	Aluminium compounds
1	Annealing
1	Bipolar transistors
1	CBE
1	Carbon additions
1	Characterization
1	Chemical beam epitaxy
1	Chemical composition
1	Chemical interdiffusion
1	Contact resistance
1	Critical temperature
1	Crystal doping
1	Crystal lattices
1	Crystal orientation
1	Current density
1	Diffusion
1	Distributed Bragg reflector
1	Elastic constants
1	Experiments
1	Heterojunction bipolar transistors
1	Heterojunction transistor
1	Indium Arsenides
1	Indium arsenides
1	Integrated optoelectronics
1	Kinetics
1	Leakage currents
1	Light scattering
1	Low pressure metallorganic vapor phase epitaxy
1	Low temperature
1	Metallorganic vapor phase epitaxy
1	Microstructure
1	Mirrors
1	Morphology
1	Multiple quantum well
1	Native state
1	Ohmic contacts
1	Optical properties
1	Photoluminescence
1	Precipitation
1	Raman scattering
1	Raman spectra
1	Reviews
1	Semiconducting indium compounds
1	Semiconducting indium phosphide
1	Semiconducting silicon
1	Semiconductor device metallizing
1	Semiconductor superlattices
1	Spectroscopy
1	Steam
1	Strained quantum well
1	Superlattices
1	Surface emitting lasers
1	Surface treatments
1	Ternary compound
1	Theory
1	Thermal method
1	Thin films
1	Uniformity
1	Vertical cavity surface emitting laser
1	Visible radiation

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "P. Legay"

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "P. Legay" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. Legay
}}

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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « P. Legay »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Legay »