P. Lecoy < P. Lefebvre < P. Legay

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000A05 (2005)		Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000A70 (2004)		Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
000C01 (2003-12-15)		Isoelectronic traps in heavily doped GaAs:(In,N)
000C30 (2003-07-15)		Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000C53 (2003-03-10)		Determination of built-in electric fields in quaternary InAlGaN heterostructures
000E21 (2002-11-15)		Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000E82 (2002-01-21)		Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002)		The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
000F25 (2002)		Small built-in electric fields in quaternary InAIGaN heterostructures
001114 (2001-03-12)		Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26)		High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001187 (2001)		Optical properties of self-assembled InGaN/GaN quantum dots
001265 (2001)		Dual contribution to the stokes shift in InGaN-GaN Quantum wells
001269 (2001)		Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
001276 (2001)		Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect
001674 (1999)		Recombination dynamics of excitons in III-nitride layers and quantum wells
001D42 (1996-10-15)		Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions
002348 (1994)		Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002820 (1992)		Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells
002865 (1992)		Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
002959 (1991)		Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells

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List of associated KwdEn.i

Nombre de documents	Descripteur
17	Experimental study
15	Photoluminescence
9	Gallium nitrides
9	III-V semiconductors
9	Semiconductor materials
9	Time resolved spectra
8	Indium nitrides
7	Ternary compounds
6	Gallium compounds
6	Indium compounds
6	Semiconductor quantum wells
6	Theoretical study
5	Binary compounds
4	Envelope function
4	Multiple quantum well
4	Quantum wells
3	Aluminium compounds
3	Band splitting
3	Electric field effects
3	Electron localization
3	Excitons
3	Gallium Indium Arsenides Mixed
3	Gallium arsenides
3	Interface states
3	Luminescence decay
3	Optical reflection
3	Quantum dots
3	Radiative recombination
3	Strained quantum well
3	Thickness
3	Valence band
2	Aluminium nitrides
2	Charge carriers
2	Chemical composition
2	Confinement
2	Electric fields
2	Electron hole pair
2	Electron-hole recombination
2	Electronic structure
2	Exciton
2	Fluctuations
2	Hamiltonian
2	Heterostructures
2	Impurity states
2	Indium arsenides
2	Inorganic compound
2	Molecular beam epitaxy
2	Optical transition
2	Pressure effects
2	Quantum effect
2	Quaternary compounds
2	Semiconductor quantum dots
2	Stark effect
2	Wide band gap semiconductors
1	Aluminium Arsenides
1	Aluminium Gallium Arsenides Mixed
1	Band offset
1	Barrier height
1	Bound state
1	Carrier mobility
1	Continuous wave
1	Dielectric polarization
1	Effective mass model
1	Electro-optical effects
1	Electron-phonon interactions
1	Energy levels
1	Energy-level transitions
1	Exciton phonon interaction
1	Gallium Arsenides
1	Growth mechanism
1	Heavily doped semiconductors
1	Hexagonal lattices
1	High field
1	Holes
1	Hydrostatic pressure
1	Indium
1	Interband transitions
1	Internal field
1	Island structure
1	Lattice parameters
1	Line intensity
1	Line widths
1	Localized states
1	Luminescence
1	Matrix element
1	Mechanical strength
1	Miniband
1	Modulation
1	Nitrogen
1	Non radiative recombination
1	Nonradiative transitions
1	Optical phonons
1	Optical properties
1	Phonon-exciton interactions
1	Photoreflectance
1	Piezo-optical effects
1	Piezoelectric semiconductors
1	Piezoelectricity
1	Piezooptical effect
1	Quantity ratio

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