Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. L. Gentner »
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J. L. Gavilano < J. L. Gentner < J. L. Guyaux  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000A20 (2005) Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000D29 (2003) Multiwafer gas source MBE development for InGaAsP/InP laser production
000E34 (2002-09-01) Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device
001004 (2002) High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001122 (2001-01-15) Excitonic contributions to the quantum-confined Pockels effect
001328 (2000-07-17) High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography
001536 (1999-09-13) 1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001680 (1999) Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
001806 (1998-11-09) 1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
001858 (1998-06-29) Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Experimental study
8Gallium arsenides
6III-V semiconductors
6Indium compounds
5Quantum well lasers
4Distributed feedback lasers
3Crystal growth from vapors
3GSMBE method
3Gallium compounds
3Indium phosphides
3Laser modes
3Molecular beam epitaxy
3Multiple quantum well
3Photoluminescence
3Ridge waveguides
3Semiconductor quantum wells
2Diffraction gratings
2Focused ion beam technology
2Gallium phosphides
2Indium arsenides
2Interface states
2Ion beam lithography
2Ion implantation
2Laser diodes
2Optical fabrication
2Pockels effect
2Semiconductor lasers
1Absorption spectra
1Aluminium arsenides
1Arsenic Phosphides
1Binary compounds
1Birefringence
1Carrier density
1Charge injection
1Confinement
1Current density
1Directly modulated multiple quantum well laser
1Doping
1Electric contacts
1Energy gap
1Envelope function
1Epitaxial layers
1Etching
1Excitons
1Experiments
1Gallium Arsenides phosphides
1Gas source molecular beam epitaxy
1Heterostructures
1Indium Arsenides phosphides
1Indium arsenic phosphide
1Indium gallium arsenic phosphide
1Infrared spectra
1Laser materials
1Laser materials processing
1Laser mirrors
1Laser stability
1Laser tuning
1Laser variables measurement
1Lasers
1Light modulation
1Light transmission
1Line intensity
1Nanostructured materials
1Optical anisotropy
1Optical isolators
1Optical materials
1Optical modulation
1Optical waveguides
1Passivation
1Phosphorus compounds
1Process control
1Proton implantation
1Protons
1Quantum wells
1Quaternary compounds
1Rapid thermal annealing
1Refractive index
1Semiconducting indium compounds
1Semiconductor materials
1Separate confinement heterostructure
1Stacking sequence
1Ternary compounds
1Theoretical study
1Theory
1Thin films
1Tuning
1Waveguide lasers

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