Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Even »
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J. Etrillard < J. Even < J. F. Berar  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000274 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
000382 (2009) Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000440 (2009) InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes
000487 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000546 (2008) Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments
000724 (2007) Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
000738 (2006) Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000740 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000857 (2006) Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000887 (2005) Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000C23 (2003-08-15) Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
000C52 (2003-03-17) Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
000D54 (2003) In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000F28 (2002) Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001018 (2002) Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

List of associated KwdEn.i

Nombre de
documents
Descripteur
14Quantum dots
12Indium arsenides
11Binary compounds
10III-V semiconductors
8Indium phosphides
7Semiconductor lasers
6Photoluminescence
6Quantum dot lasers
6Semiconductor materials
5Gallium arsenides
5Threshold current
4Electronic structure
4Experimental study
4Indium Arsenides
4Indium Phosphides
4Nanostructures
3Ambient temperature
3Excited states
3Optical pumping
3Rate equation
3Theoretical study
3Time resolved spectra
2Anisotropy
2Atomic force microscopy
2Current density
2Density functional method
2Emission spectra
2Energy gap
2Excitons
2Gallium phosphides
2Ground states
2Indium compounds
2Inorganic compounds
2Iron
2Island structure
2Microstructure
2Mismatch lattice
2Modelling
2Numerical method
2Optical communication
2Optical saturable absorption
2Quantum wires
2Semiconductor quantum wells
2Temperature dependence
2Ternary compounds
2Wetting
1Ab initio calculations
1Acoustical phonons
1Aluminium arsenides
1Analytical method
1Auger effect
1Band splitting
1Band structure
1Biaxial strain
1Blende structure
1Carrier density
1Cavities
1Charge carrier injection
1Continuous wave
1Cost lowering
1Coulomb interaction
1Crystal growth from vapors
1Density
1Dimensionality
1Dispersion relations
1Doping
1Double layers
1Effective Hamiltonian
1Effective mass model
1Elastic constants
1Elastic deformation
1Electroluminescence
1Electron-hole recombination
1Electronic density of states
1Elliptic shape
1Empirical model
1Energy levels
1Energy-level transitions
1Enhancement factor
1Excitation spectrum
1Feedback
1Fourier transformation
1GSMBE method
1Gain
1Gallium Arsenides
1Hamiltonians
1High-speed optical techniques
1Indium antimonides
1Indium phosphide
1Infrared laser
1Infrared spectra
1Interaction potentials
1Interband transitions
1Interface structure
1Laser materials
1Laser radiation
1Lattice parameters
1Light emission
1Line broadening
1Line widths

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