Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Etrillard »
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J. Etourneau < J. Etrillard < J. Even  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001555 (1999-07) New self-aligned processes for III-V electronic high speed devices
001556 (1999-07) Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001E08 (1996-05) Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture
002097 (1995) Gravure hélicon de l'InP en plasma HBr. Morphologie et caractérisation des défauts de surface
002753 (1993) 'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth
002B32 (1990) Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Experimental study
3III-V semiconductors
3Indium compounds
3Photoluminescence
3Sputter etching
2Damage
2Etching
2Gallium Arsenides
2Heterojunction bipolar transistors
2Indium phosphides
2SEM
2TEM
1AES
1Aluminium Gallium Arsenides Mixed
1Atomic force microscopy
1Auger effect
1Auger electron spectra
1Charge carrier recombination
1Comparative evaluations
1Confinement
1Electron beam lithography
1Epitaxy
1Experiments
1Gain
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides Mixed
1Gallium arsenides
1Heat resistance
1Helicon waves
1Heterojunction transistor
1Hydrobromic acid
1Hydrogen
1Indium Phosphides
1Inorganic compound
1Ion beams
1Isolation technology
1Lifetime
1Lithography
1Masks
1Methane
1Microwave device
1Morphology
1Oxygen
1Performance characteristic
1Plasma
1Preparation
1Quantum wire
1Resists
1Scanning electron microscopy
1Secondary ion mass spectra
1Semiconducting gallium compounds
1Semiconducting indium phosphide
1Semiconductor device
1Semiconductor diodes
1Semiconductor growth
1Semiconductor lasers
1Semiconductor materials
1Spectral line shift
1Surface analysis
1Surface structure
1Thickness
1Vertical cavity lasers
1Voltage current curve
1surface composition

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "J. Etrillard" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

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