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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. De Cremoux »
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B. Daudin < B. De Cremoux < B. Della  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
001F07 (1996) Low temperature behaviour of laser diodes
002842 (1992) Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
002942 (1991) Etude et réalisation de circuits intégrés optoélectroniques microondes
002A25 (1991) Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells
002A83 (1990) Modulateurs électrooptiques à faible perte dans InGaAsP/InP
002B26 (1990) Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
002B27 (1990) Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well
002B28 (1990) Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination
002E09 (1988) Electro-optical modulators using novel buried waveguides in GaInAsP/InP material
002E51 (1987) Modulateurs à faibles pertes dans InGaAsP/InP
002F50 (1987) CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
002F51 (1987) C-V measurement and modelization of GalnAs/InP heterointerface with traps
003034 (1986) Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
003051 (1986) A simple model and calculation of the influence of doping and intrinsic concentrations on the interstitial-substitutional diffusion mechanism: application to Zn and Cd in InP
003092 (1984) cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
003094 (1984) The temperature-dependent diffusion mechanism of Zn in InP using the semiclosed diffusion method
003122 (1984) CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Indium Phosphides
9Gallium Indium Arsenides phosphides Mixed
7Gallium Indium Arsenides Mixed
4Chemical vapor deposition
4Experimental study
4Inorganic compound
4Semiconductor laser
4Semiconductor materials
3CW laser
3Electrooptical modulator
3III-V compound
3Low pressure
3Monolithic integrated circuit
3Organometallic compound
2Band structure
2Buried channel
2Charge carrier concentration
2Crystal growth
2Heterojunction
2Impurity diffusion
2Infrared absorption
2Injection laser
2Integrated optics
2Manufacturing
2Microwave circuit
2Optical modulator
2Optical waveguide
2Photodiode
2Photoluminescence
2Quantum well
2Theoretical study
2Zinc
1Absorptance
1Amplitude
1Application
1Band offset
1Binary compound
1Buried laser
1Cadmium
1Charge density
1Compression
1Concentration distribution
1Conduction band
1Coupling
1Dark current
1Diffusion profile
1Digital simulation
1Discontinuity
1Distributed feedback laser
1Doping
1Electronic structure
1Epitaxy
1Excitation spectrum
1Fabry Perot resonator
1Frequency
1Frequency characteristic
1Gain
1Gallium Arsenides
1High temperature
1Illumination
1Impedance matching
1Infrared radiation
1Insertion loss
1Integrated optoelectronics
1Interstitial impurities
1Low frequency
1Mechanism
1Microstrip line
1Multiple quantum well
1Network
1Non linear device
1Optical modulation
1Optical transition
1Optoelectronic devices
1P i n diode
1Performance characteristic
1Phase
1Phase locking
1Photoelectric cell
1Reactive circuit
1Rib waveguide
1Ridge waveguide
1Secondary ion mass spectrometry
1Static characteristic
1Substrate
1Temperature
1Trap
1Vapor phase
1Voltage capacity curve
1Wave attenuation
1Wavelength division multiplexing
1p i n diode

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