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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Daudin »
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B. Datnilano < B. Daudin < B. De Cremoux  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000319 (2010) GaN-based nanowires: From nanometric-scale characterization to light emitting diodes
000C16 (2003-09-01) Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C46 (2003-04-07) In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C61 (2003-02-01) Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
001079 (2001-09-10) Incorporation kinetics of indium in indium gallium nitride at low temperature
001340 (2000-03-20) Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
001512 (1999-11-29) Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
001523 (1999-10-15) Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy
001952 (1998) Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy
001D71 (1996-07-22) Ohmic contacts on n-type CdTe and CdZnTe using coherently grown neodymium
002033 (1995-08-14) Iodine doping of CdTe and CdZnTe layers grown by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
9Molecular beam epitaxy
8III-V semiconductors
7Gallium compounds
7Semiconductor growth
5Indium compounds
4Semiconductor epitaxial layers
4Wide band gap semiconductors
3Aluminium compounds
3Photoluminescence
3Plasma deposition
3RHEED
2Surface segregation
2Surfactants
1Aluminium nitrides
1Atomic force microscopy
1Binary compound
1Binary compounds
1Blueshift
1Cadmium tellurides
1Carrier density
1Carrier mobility
1Cathodoluminescence
1Comparative study
1Crystal doping
1Dislocation nucleation
1Elastic deformation
1Electroluminescence
1Electron blocking layer
1Gallium nitride
1Gallium nitrides
1Growth mechanism
1Heterojunctions
1Heterostructures
1Indium
1Indium nitride
1Indium nitrides
1Iodine additions
1Light emitting diode
1Mismatch lattice
1Mosaic structure
1Multiple quantum well
1N-type conductors
1Nanoelectronics
1Nanowires
1Plastic deformation
1Quantum confined Stark effect
1RBS
1Radiative recombination
1Room temperature
1Semiconductor quantum dots
1Silicon
1Stoichiometry
1Stress relaxation
1Substrates
1Ternary compound
1Top contact configuration
1XRD
1Zinc tellurides
1n type semiconductor
1p type semiconductor
1self-assembly

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "B. Daudin" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Daudin" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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