Surface topography effects in C60 bombardment of Si
Identifieur interne : 000460 ( Istex/Corpus ); précédent : 000459; suivant : 000461Surface topography effects in C60 bombardment of Si
Auteurs : Edward L. Cook ; Kristin D. Krantzman ; Barbara J. GarrisonSource :
- Surface and Interface Analysis [ 0142-2421 ] ; 2013-01.
Abstract
Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C60 projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 1013 C60/cm2. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.
Url:
DOI: 10.1002/sia.4965
Links to Exploration step
ISTEX:792687FBE6634E085E65DCEE9B4783EAD96B545ALe document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Surface topography effects in C60 bombardment of Si</title><author><name sortKey="Cook, Edward L" sort="Cook, Edward L" uniqKey="Cook E" first="Edward L." last="Cook">Edward L. Cook</name><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</mods:affiliation></affiliation></author><author><name sortKey="Krantzman, Kristin D" sort="Krantzman, Kristin D" uniqKey="Krantzman K" first="Kristin D." last="Krantzman">Kristin D. Krantzman</name><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</mods:affiliation></affiliation><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.E‐mail:</mods:affiliation></affiliation><affiliation><mods:affiliation>E-mail: krantzmank@cofc.edu</mods:affiliation></affiliation></author><author><name sortKey="Garrison, Barbara J" sort="Garrison, Barbara J" uniqKey="Garrison B" first="Barbara J." last="Garrison">Barbara J. Garrison</name><affiliation><mods:affiliation>Department of Chemistry, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:792687FBE6634E085E65DCEE9B4783EAD96B545A</idno><date when="2013" year="2013">2013</date><idno type="doi">10.1002/sia.4965</idno><idno type="url">https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000460</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Surface topography effects in C60 bombardment of Si</title><author><name sortKey="Cook, Edward L" sort="Cook, Edward L" uniqKey="Cook E" first="Edward L." last="Cook">Edward L. Cook</name><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</mods:affiliation></affiliation></author><author><name sortKey="Krantzman, Kristin D" sort="Krantzman, Kristin D" uniqKey="Krantzman K" first="Kristin D." last="Krantzman">Kristin D. Krantzman</name><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</mods:affiliation></affiliation><affiliation><mods:affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.E‐mail:</mods:affiliation></affiliation><affiliation><mods:affiliation>E-mail: krantzmank@cofc.edu</mods:affiliation></affiliation></author><author><name sortKey="Garrison, Barbara J" sort="Garrison, Barbara J" uniqKey="Garrison B" first="Barbara J." last="Garrison">Barbara J. Garrison</name><affiliation><mods:affiliation>Department of Chemistry, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Surface and Interface Analysis</title><title level="j" type="abbrev">Surf. Interface Anal.</title><idno type="ISSN">0142-2421</idno><idno type="eISSN">1096-9918</idno><imprint><publisher>Blackwell Publishing Ltd</publisher><date type="published" when="2013-01">2013-01</date><biblScope unit="volume">45</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="93">93</biblScope><biblScope unit="page" to="96">96</biblScope></imprint><idno type="ISSN">0142-2421</idno></series><idno type="istex">792687FBE6634E085E65DCEE9B4783EAD96B545A</idno><idno type="DOI">10.1002/sia.4965</idno><idno type="ArticleID">SIA4965</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0142-2421</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract">Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C60 projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 1013 C60/cm2. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.</div></front></TEI><istex><corpusName>wiley</corpusName><author><json:item><name>Edward L. Cook</name><affiliations><json:string>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</json:string></affiliations></json:item><json:item><name>Kristin D. Krantzman</name><affiliations><json:string>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</json:string><json:string>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.E‐mail:</json:string><json:string>E-mail: krantzmank@cofc.edu</json:string></affiliations></json:item><json:item><name>Barbara J. Garrison</name><affiliations><json:string>Department of Chemistry, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>dynamics SIMS</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>molecular dynamics simulations</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>C60+</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>silicon</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>carbon</value></json:item></subject><articleId><json:string>SIA4965</json:string></articleId><language><json:string>eng</json:string></language><originalGenre><json:string>article</json:string></originalGenre><abstract>Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C60 projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 1013 C60/cm2. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.</abstract><qualityIndicators><score>5.256</score><pdfVersion>1.4</pdfVersion><pdfPageSize>595.276 x 790.866 pts</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>5</keywordCount><abstractCharCount>1045</abstractCharCount><pdfWordCount>2752</pdfWordCount><pdfCharCount>15394</pdfCharCount><pdfPageCount>4</pdfPageCount><abstractWordCount>167</abstractWordCount></qualityIndicators><title>Surface topography effects in C60 bombardment of Si</title><genre><json:string>article</json:string></genre><host><volume>45</volume><editor><json:item><name>Enrico Napolitani</name></json:item><json:item><name>Damiano Giubertoni</name></json:item><json:item><name>Massimo Bersani</name></json:item><json:item><name>Mariano Anderle</name></json:item><json:item><name>Antonino Licciardello</name></json:item></editor><publisherId><json:string>SIA</json:string></publisherId><pages><total>4</total><last>96</last><first>93</first></pages><issn><json:string>0142-2421</json:string></issn><issue>1</issue><subject><json:item><value>SIMS proceedings paper</value></json:item></subject><genre><json:string>journal</json:string></genre><language><json:string>unknown</json:string></language><eissn><json:string>1096-9918</json:string></eissn><title>Surface and Interface Analysis</title><doi><json:string>10.1002/(ISSN)1096-9918</json:string></doi></host><publicationDate>2013</publicationDate><copyrightDate>2013</copyrightDate><doi><json:string>10.1002/sia.4965</json:string></doi><id>792687FBE6634E085E65DCEE9B4783EAD96B545A</id><score>0.15784791</score><fulltext><json:item><original>true</original><mimetype>application/pdf</mimetype><extension>pdf</extension><uri>https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/fulltext/pdf</uri></json:item><json:item><original>false</original><mimetype>application/zip</mimetype><extension>zip</extension><uri>https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a" type="main" xml:lang="en">Surface topography effects in C60 bombardment of Si</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>Blackwell Publishing Ltd</publisher><availability><p>Copyright © 2013 John Wiley & Sons, Ltd.Copyright © 2012 John Wiley & Sons, Ltd.</p></availability><date>2012-03-28</date></publicationStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a" type="main" xml:lang="en">Surface topography effects in C60 bombardment of Si</title><author xml:id="author-1"><persName><forename type="first">Edward L.</forename><surname>Cook</surname></persName><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</affiliation></author><author xml:id="author-2"><persName><forename type="first">Kristin D.</forename><surname>Krantzman</surname></persName><email>krantzmank@cofc.edu</email><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</affiliation><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.E‐mail:</affiliation></author><author xml:id="author-3"><persName><forename type="first">Barbara J.</forename><surname>Garrison</surname></persName><affiliation>Department of Chemistry, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA</affiliation></author></analytic><monogr><title level="j">Surface and Interface Analysis</title><title level="j" type="abbrev">Surf. Interface Anal.</title><idno type="pISSN">0142-2421</idno><idno type="eISSN">1096-9918</idno><idno type="DOI">10.1002/(ISSN)1096-9918</idno><editor><persName><forename type="first">Enrico</forename><surname>Napolitani</surname></persName></editor><editor><persName><forename type="first">Damiano</forename><surname>Giubertoni</surname></persName></editor><editor><persName><forename type="first">Massimo</forename><surname>Bersani</surname></persName></editor><editor><persName><forename type="first">Mariano</forename><surname>Anderle</surname></persName></editor><editor><persName><forename type="first">Antonino</forename><surname>Licciardello</surname></persName></editor><imprint><publisher>Blackwell Publishing Ltd</publisher><date type="published" when="2013-01"></date><biblScope unit="volume">45</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="93">93</biblScope><biblScope unit="page" to="96">96</biblScope></imprint></monogr><idno type="istex">792687FBE6634E085E65DCEE9B4783EAD96B545A</idno><idno type="DOI">10.1002/sia.4965</idno><idno type="ArticleID">SIA4965</idno></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>2012-03-28</date></creation><langUsage><language ident="en">en</language></langUsage><abstract><p>Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C60 projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 1013 C60/cm2. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.</p></abstract><textClass><keywords scheme="keyword"><list><head>keywords</head><item><term>dynamics SIMS</term></item><item><term>molecular dynamics simulations</term></item><item><term>C60+</term></item><item><term>silicon</term></item><item><term>carbon</term></item></list></keywords></textClass><textClass><keywords scheme="Journal Subject"><list><head>article-category</head><item><term>SIMS proceedings paper</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="2011-09-30">Received</change><change when="2012-03-13">Registration</change><change when="2012-03-28">Created</change><change when="2013-01">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><original>false</original><mimetype>text/plain</mimetype><extension>txt</extension><uri>https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Wiley, elements deleted: body"><istex:xmlDeclaration>version="1.0" encoding="UTF-8" standalone="yes"</istex:xmlDeclaration><istex:document><component type="serialArticle" version="2.0" xml:lang="en" xml:id="sia4965"><header><publicationMeta level="product"><doi>10.1002/(ISSN)1096-9918</doi><issn type="print">0142-2421</issn><issn type="electronic">1096-9918</issn><idGroup><id type="product" value="SIA"></id></idGroup><titleGroup><title type="main" sort="SURFACE AND INTERFACE ANALYSIS">Surface and Interface Analysis</title><title type="short">Surf. Interface Anal.</title></titleGroup></publicationMeta><publicationMeta level="part" position="10"><doi>10.1002/sia.v45.1</doi><titleGroup><title type="specialIssueTitle">Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18 ‐ 23, 2011</title></titleGroup><copyright ownership="publisher">Copyright © 2013 John Wiley & Sons, Ltd.</copyright><numberingGroup><numbering type="journalVolume" number="45">45</numbering><numbering type="journalIssue">1</numbering></numberingGroup><creators><creator creatorRole="guestEditor" xml:id="sia4965-cr-0001"><personName><givenNames>Enrico</givenNames><familyName>Napolitani</familyName></personName></creator><creator creatorRole="guestEditor" xml:id="sia4965-cr-0002"><personName><givenNames>Damiano</givenNames><familyName>Giubertoni</familyName></personName></creator><creator creatorRole="guestEditor" xml:id="sia4965-cr-0003"><personName><givenNames>Massimo</givenNames><familyName>Bersani</familyName></personName></creator><creator creatorRole="guestEditor" xml:id="sia4965-cr-0004"><personName><givenNames>Mariano</givenNames><familyName>Anderle</familyName></personName></creator><creator creatorRole="guestEditor" xml:id="sia4965-cr-0005"><personName><givenNames>Antonino</givenNames><familyName>Licciardello</familyName></personName></creator></creators><coverDate startDate="2013-01">January 2013</coverDate></publicationMeta><publicationMeta level="unit" position="250" type="article" status="forIssue"><doi>10.1002/sia.4965</doi><idGroup><id type="unit" value="SIA4965"></id></idGroup><countGroup><count type="pageTotal" number="4"></count></countGroup><titleGroup><title type="articleCategory">SIMS proceedings paper</title><title type="tocHeading1">SIMS proceedings papers</title></titleGroup><copyright ownership="publisher">Copyright © 2012 John Wiley & Sons, Ltd.</copyright><eventGroup><event type="manuscriptReceived" date="2011-09-30"></event><event type="manuscriptRevised" date="2012-03-06"></event><event type="manuscriptAccepted" date="2012-03-13"></event><event type="xmlCreated" agent="SPi Global" date="2012-03-28"></event><event type="publishedOnlineEarlyUnpaginated" date="2012-04-18"></event><event type="publishedOnlineFinalForm" date="2012-12-18"></event><event type="firstOnline" date="2012-04-18"></event><event type="xmlConverted" agent="Converter:WILEY_ML3G_TO_WILEY_ML3GV2 version:3.8.8" date="2014-02-08"></event><event type="xmlConverted" agent="Converter:WML3G_To_WML3G version:4.6.4 mode:FullText" date="2015-10-02"></event></eventGroup><numberingGroup><numbering type="pageFirst">93</numbering><numbering type="pageLast">96</numbering></numberingGroup><correspondenceTo><lineatedText><line>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.</line><line>E‐mail: <email>krantzmank@cofc.edu</email></line></lineatedText></correspondenceTo><linkGroup><link type="toTypesetVersion" href="file:SIA.SIA4965.pdf"></link></linkGroup></publicationMeta><contentMeta><titleGroup><title type="main">Surface topography effects in C<sub>60</sub> bombardment of Si</title><title type="short">Surface topography effects in C<sub>60</sub> bombardment of Si</title><title type="shortAuthors">E. L. Cook, K. D. Krantzman and B. J. Garrison</title></titleGroup><creators><creator creatorRole="author" xml:id="sia4965-cr-0006" affiliationRef="#sia4965-aff-0001"><personName><givenNames>Edward L.</givenNames><familyName>Cook</familyName></personName></creator><creator creatorRole="author" xml:id="sia4965-cr-0007" affiliationRef="#sia4965-aff-0001" corresponding="yes"><personName><givenNames>Kristin D.</givenNames><familyName>Krantzman</familyName></personName></creator><creator creatorRole="author" xml:id="sia4965-cr-0008" affiliationRef="#sia4965-aff-0002"><personName><givenNames>Barbara J.</givenNames><familyName>Garrison</familyName></personName></creator></creators><affiliationGroup><affiliation countryCode="US" type="organization" xml:id="sia4965-aff-0001"><orgName>Department of Chemistry and Biochemistry</orgName><address><street>66 George Street, College of Charleston</street><city>Charleston</city><postCode>SC 29412</postCode><country>USA</country></address></affiliation><affiliation countryCode="US" type="organization" xml:id="sia4965-aff-0002"><orgDiv>Department of Chemistry, 104 Chemistry Building</orgDiv><orgName>Penn State University, University Park</orgName><address><postCode>PA 16802</postCode><country>USA</country></address></affiliation></affiliationGroup><keywordGroup type="author"><keyword xml:id="sia4965-kwd-0001">dynamics SIMS</keyword><keyword xml:id="sia4965-kwd-0002">molecular dynamics simulations</keyword><keyword xml:id="sia4965-kwd-0003">C<sub>60</sub><sup>+</sup></keyword><keyword xml:id="sia4965-kwd-0004">silicon</keyword><keyword xml:id="sia4965-kwd-0005">carbon</keyword></keywordGroup><abstractGroup><abstract type="main"><p>Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C<sub>60</sub> projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 10<sup>13</sup> C<sub>60</sub>/cm<sup>2</sup>. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.</p></abstract></abstractGroup></contentMeta></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Surface topography effects in C60 bombardment of Si</title></titleInfo><titleInfo type="abbreviated" lang="en"><title>Surface topography effects in C60 bombardment of Si</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>Surface topography effects in C60 bombardment of Si</title></titleInfo><name type="personal"><namePart type="given">Edward L.</namePart><namePart type="family">Cook</namePart><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Kristin D.</namePart><namePart type="family">Krantzman</namePart><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, SC 29412, Charleston, USA</affiliation><affiliation>Department of Chemistry and Biochemistry, 66 George Street, College of Charleston, Charleston, SC 29412, USA.E‐mail:</affiliation><affiliation>E-mail: krantzmank@cofc.edu</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Barbara J.</namePart><namePart type="family">Garrison</namePart><affiliation>Department of Chemistry, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="article" displayLabel="article"></genre><originInfo><publisher>Blackwell Publishing Ltd</publisher><dateIssued encoding="w3cdtf">2013-01</dateIssued><dateCreated encoding="w3cdtf">2012-03-28</dateCreated><dateCaptured encoding="w3cdtf">2011-09-30</dateCaptured><dateValid encoding="w3cdtf">2012-03-13</dateValid><copyrightDate encoding="w3cdtf">2013</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract>Molecular dynamics simulations of multi‐impact bombardment of Si with 20‐keV C60 projectiles at normal incidence are performed for a total of 400 impacts, which corresponds to a fluence of of 7 × 1013 C60/cm2. The surface is roughened by successive bombardment and achieves a steady‐state root mean square roughness of 2.0 nm after about 100 impacts. There is a direct correlation between the local topography of the region around the impact point and the sputtered yield. The greatest yields of sputtered atoms are produced when the projectile impacts a mound, which is characterized by the height of the surface relative to the average surface height. When the projectile hits a local region corresponding to a crater with a height much less than the average surface height, the sputtered yield is very small. However, it is these trajectories that deposit carbon atoms at depths beneath the region from which atoms are sputtered, and are responsible for the buildup of carbon at the bottom of craters. Copyright © 2012 John Wiley & Sons, Ltd.</abstract><subject><genre>keywords</genre><topic>dynamics SIMS</topic><topic>molecular dynamics simulations</topic><topic>C60+</topic><topic>silicon</topic><topic>carbon</topic></subject><relatedItem type="host"><titleInfo><title>Surface and Interface Analysis</title></titleInfo><titleInfo type="abbreviated"><title>Surf. Interface Anal.</title></titleInfo><name type="personal"><namePart type="given">Enrico</namePart><namePart type="family">Napolitani</namePart><role><roleTerm type="text">editor</roleTerm></role></name><name type="personal"><namePart type="given">Damiano</namePart><namePart type="family">Giubertoni</namePart><role><roleTerm type="text">editor</roleTerm></role></name><name type="personal"><namePart type="given">Massimo</namePart><namePart type="family">Bersani</namePart><role><roleTerm type="text">editor</roleTerm></role></name><name type="personal"><namePart type="given">Mariano</namePart><namePart type="family">Anderle</namePart><role><roleTerm type="text">editor</roleTerm></role></name><name type="personal"><namePart type="given">Antonino</namePart><namePart type="family">Licciardello</namePart><role><roleTerm type="text">editor</roleTerm></role></name><genre type="journal">journal</genre><subject><genre>article-category</genre><topic>SIMS proceedings paper</topic></subject><identifier type="ISSN">0142-2421</identifier><identifier type="eISSN">1096-9918</identifier><identifier type="DOI">10.1002/(ISSN)1096-9918</identifier><identifier type="PublisherID">SIA</identifier><part><date>2013</date><detail type="title"><title>Proceedings of the Eighteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XVIII, Riva Del Garda, Trento, Italy, September 18 ‐ 23, 2011</title></detail><detail type="volume"><caption>vol.</caption><number>45</number></detail><detail type="issue"><caption>no.</caption><number>1</number></detail><extent unit="pages"><start>93</start><end>96</end><total>4</total></extent></part></relatedItem><identifier type="istex">792687FBE6634E085E65DCEE9B4783EAD96B545A</identifier><identifier type="DOI">10.1002/sia.4965</identifier><identifier type="ArticleID">SIA4965</identifier><accessCondition type="use and reproduction" contentType="copyright">Copyright © 2013 John Wiley & Sons, Ltd.Copyright © 2012 John Wiley & Sons, Ltd.</accessCondition><recordInfo><recordContentSource>WILEY</recordContentSource></recordInfo></mods></metadata><enrichments><json:item><type>multicat</type><uri>https://api.istex.fr/document/792687FBE6634E085E65DCEE9B4783EAD96B545A/enrichments/multicat</uri></json:item></enrichments><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Ticri/CIDE/explor/CyberinfraV1/Data/Istex/Corpus
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000460 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Istex/Corpus/biblio.hfd -nk 000460 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Ticri/CIDE
|area= CyberinfraV1
|flux= Istex
|étape= Corpus
|type= RBID
|clé= ISTEX:792687FBE6634E085E65DCEE9B4783EAD96B545A
|texte= Surface topography effects in C60 bombardment of Si
}}
| This area was generated with Dilib version V0.6.25. |  |