Collective Interactions of Excitons in Semiconductors
Identifieur interne : 002B57 ( Main/Exploration ); précédent : 002B56; suivant : 002B58Collective Interactions of Excitons in Semiconductors
Auteurs : N. G. Basov [Russie]Source :
- The Lebedev Physics Institute Series
Abstract
Abstract: At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m0-01m0) we can expect formation of excitons with a binding energy. ε0 ≈ 10‒2 eV (this is an order-of-magnitude estimate) and a large Bohr radius (a ≈ 10‒6 cm). The values of ε0 and a for each semiconductor can be found from the formulas ε0 = 1/2 e4 μ/ ϰ2Ћ2 and a = ϰ Ћ2V/μe2, where μ = memh/(me + mh), me and mh are the effective masses of an electron and a hole, and m0 is the mass of a free electron.
Url:
DOI: 10.1007/978-1-4615-7548-1_11
Affiliations:
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