Collective Interactions of Excitons in Semiconductors
Identifieur interne : 000461 ( Istex/Corpus ); précédent : 000460; suivant : 000462Collective Interactions of Excitons in Semiconductors
Auteurs : N. G. BasovSource :
- The Lebedev Physics Institute Series
Abstract
Abstract: At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m0-01m0) we can expect formation of excitons with a binding energy. ε0 ≈ 10‒2 eV (this is an order-of-magnitude estimate) and a large Bohr radius (a ≈ 10‒6 cm). The values of ε0 and a for each semiconductor can be found from the formulas ε0 = 1/2 e4 μ/ ϰ2Ћ2 and a = ϰ Ћ2V/μe2, where μ = memh/(me + mh), me and mh are the effective masses of an electron and a hole, and m0 is the mass of a free electron.
Url:
DOI: 10.1007/978-1-4615-7548-1_11
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ISTEX:334D4CE5FF7711F449F704164AE7B99EC6704366Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Collective Interactions of Excitons in Semiconductors</title><author><name sortKey="Basov, N G" sort="Basov, N G" uniqKey="Basov N" first="N. G." last="Basov">N. G. Basov</name><affiliation><mods:affiliation>P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, USSR</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:334D4CE5FF7711F449F704164AE7B99EC6704366</idno><date when="1976" year="1976">1976</date><idno type="doi">10.1007/978-1-4615-7548-1_11</idno><idno type="url">https://api.istex.fr/ark:/67375/HCB-9HQF5BX7-H/fulltext.pdf</idno><idno type="wicri:Area/Istex/Corpus">000461</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000461</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Collective Interactions of Excitons in Semiconductors</title><author><name sortKey="Basov, N G" sort="Basov, N G" uniqKey="Basov N" first="N. G." last="Basov">N. G. Basov</name><affiliation><mods:affiliation>P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, USSR</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="s" type="main" xml:lang="en">The Lebedev Physics Institute Series</title></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m0-01m0) we can expect formation of excitons with a binding energy. ε0 ≈ 10‒2 eV (this is an order-of-magnitude estimate) and a large Bohr radius (a ≈ 10‒6 cm). The values of ε0 and a for each semiconductor can be found from the formulas ε0 = 1/2 e4 μ/ ϰ2Ћ2 and a = ϰ Ћ2V/μe2, where μ = memh/(me + mh), me and mh are the effective masses of an electron and a hole, and m0 is the mass of a free electron.</div></front></TEI><istex><corpusName>springer-ebooks</corpusName><author><json:item><name>N. G. Basov</name><affiliations><json:string>P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, USSR</json:string></affiliations></json:item></author><arkIstex>ark:/67375/HCB-9HQF5BX7-H</arkIstex><language><json:string>eng</json:string></language><originalGenre><json:string>OriginalPaper</json:string></originalGenre><abstract>Abstract: At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m0-01m0) we can expect formation of excitons with a binding energy. ε0 ≈ 10‒2 eV (this is an order-of-magnitude estimate) and a large Bohr radius (a ≈ 10‒6 cm). The values of ε0 and a for each semiconductor can be found from the formulas ε0 = 1/2 e4 μ/ ϰ2Ћ2 and a = ϰ Ћ2V/μe2, where μ = memh/(me + mh), me and mh are the effective masses of an electron and a hole, and m0 is the mass of a free electron.</abstract><qualityIndicators><refBibsNative>false</refBibsNative><abstractWordCount>136</abstractWordCount><abstractCharCount>741</abstractCharCount><keywordCount>0</keywordCount><score>4.823</score><pdfWordCount>1191</pdfWordCount><pdfCharCount>6463</pdfCharCount><pdfVersion>1.4</pdfVersion><pdfPageCount>2</pdfPageCount><pdfPageSize>595 x 791 pts</pdfPageSize></qualityIndicators><title>Collective Interactions of Excitons in Semiconductors</title><chapterId><json:string>11</json:string><json:string>Chap11</json:string></chapterId><genre><json:string>research-article</json:string></genre><serie><title>The Lebedev Physics Institute Series</title><language><json:string>unknown</json:string></language><copyrightDate>1976</copyrightDate><editor><json:item><name>Academician D. 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N. Lebedev Physics Institute</orgName><orgName type="institution">Academy of Sciences of the USSR</orgName><address><settlement>Moscow</settlement><country key=""></country></address></affiliation></author><idno type="istex">334D4CE5FF7711F449F704164AE7B99EC6704366</idno><idno type="ark">ark:/67375/HCB-9HQF5BX7-H</idno><idno type="DOI">10.1007/978-1-4615-7548-1_11</idno></analytic><monogr><title level="m" type="main">Optical Properties of Semiconductors</title><title level="m" type="part">Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide and Silicon</title><idno type="DOI">10.1007/978-1-4615-7548-1</idno><idno type="book-id">978-1-4615-7548-1</idno><idno type="ISBN">978-1-4615-7550-4</idno><idno type="eISBN">978-1-4615-7548-1</idno><idno type="chapter-id">Chap11</idno><idno type="part-id">Part3</idno><editor><persName><forename type="first">N.</forename><forename type="first">G.</forename><surname>Basov</surname></persName><affiliation><orgName type="department">P. N. Lebedev Physics Institute</orgName><orgName type="institution">Academy of Sciences of the USSR</orgName><address><settlement>Moscow</settlement><country key=""></country></address></affiliation></editor><imprint><biblScope unit="vol">75</biblScope><biblScope unit="page" from="134">134</biblScope><biblScope unit="page" to="135">135</biblScope><biblScope unit="chapter-count">16</biblScope><biblScope unit="part-chapter-count">6</biblScope></imprint></monogr><series><title level="s" type="main" xml:lang="en">The Lebedev Physics Institute Series</title><editor><persName><forename type="first">D.</forename><forename type="first">V.</forename><surname>Skobel’tsyn</surname></persName><affiliation><orgName type="department">P. N. Lebedev Physics Institute</orgName><orgName type="institution">Academy of Sciences of the USSR</orgName><address><country key=""></country></address></affiliation></editor><editor><persName><forename type="first">N.</forename><forename type="first">G.</forename><surname>Basov</surname></persName><affiliation><orgName type="department">P. N. Lebedev Physics Institute</orgName><orgName type="institution">Academy of Sciences of the USSR</orgName><address><country key=""></country></address></affiliation></editor><idno type="seriesID">10734</idno></series></biblStruct></sourceDesc></fileDesc><profileDesc><abstract xml:lang="en"><head>Abstract</head><p>At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m<hi rend="subscript">0</hi>-01m<hi rend="subscript">0</hi>) we can expect formation of excitons with a binding energy. <hi rend="italic">ε</hi><hi rend="subscript">0</hi> ≈ 10<hi rend="superscript">‒2</hi> eV (this is an order-of-magnitude estimate) and a large Bohr radius <hi rend="italic">(a</hi> ≈ 10<hi rend="superscript">‒6</hi> cm). The values of <hi rend="italic">ε</hi><hi rend="subscript">0</hi> and <hi rend="italic">a</hi> for each semiconductor can be found from the formulas <hi rend="italic">ε</hi><hi rend="subscript">0</hi> = 1/2 e<hi rend="superscript">4</hi> μ/ ϰ<hi rend="superscript">2</hi>Ћ<hi rend="superscript">2</hi> and <hi rend="italic">a</hi> = ϰ Ћ<hi rend="superscript">2</hi>V/<hi rend="italic">μ</hi>e<hi rend="superscript">2</hi>, where <hi rend="italic">μ</hi> = m<hi rend="subscript">e</hi>m<hi rend="subscript">h</hi>/(m<hi rend="subscript">e</hi> + m<hi rend="subscript">h</hi>), m<hi rend="subscript">e</hi> and m<hi rend="subscript">h</hi> are the effective masses of an electron and a hole, and m<hi rend="subscript">0</hi> is the mass of a free electron.</p></abstract><textClass ana="subject"><keywords scheme="book-subject-collection"><list><label>SUCO11651</label><item><term>Physics and Astronomy</term></item></list></keywords></textClass><textClass ana="subject"><keywords scheme="book-subject"><list><label>P</label><item><term type="Primary">Physics</term></item><label>P25013</label><item><term type="Secondary" subtype="priority-1">Solid State Physics</term></item><label>P31090</label><item><term type="Secondary" subtype="priority-2">Spectroscopy and Microscopy</term></item></list></keywords></textClass><langUsage><language ident="EN"></language></langUsage></profileDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/ark:/67375/HCB-9HQF5BX7-H/fulltext.txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="corpus springer-ebooks not found" wicri:toSee="no header"><istex:xmlDeclaration>version="1.0" encoding="UTF-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//Springer-Verlag//DTD A++ V2.4//EN" URI="http://devel.springer.de/A++/V2.4/DTD/A++V2.4.dtd" name="istex:docType"></istex:docType><istex:document><Publisher><PublisherInfo><PublisherName>Springer US</PublisherName><PublisherLocation>Boston, MA</PublisherLocation><PublisherImprintName>Springer</PublisherImprintName></PublisherInfo><Series><SeriesInfo TocLevels="0" SeriesType="Series"><SeriesID>10734</SeriesID><SeriesTitle Language="En">The Lebedev Physics Institute Series</SeriesTitle></SeriesInfo><SeriesHeader><EditorGroup><Editor AffiliationIDS="Aff1"><EditorName DisplayOrder="Western"><Prefix>Academician</Prefix><GivenName>D.</GivenName><GivenName>V.</GivenName><FamilyName>Skobel’tsyn</FamilyName></EditorName></Editor><Editor AffiliationIDS="Aff1"><EditorName DisplayOrder="Western"><Prefix>Academician</Prefix><GivenName>N.</GivenName><GivenName>G.</GivenName><FamilyName>Basov</FamilyName></EditorName></Editor><Affiliation ID="Aff1"><OrgDivision>P. 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Lebedev Physics Institute</OrgDivision><OrgName>Academy of Sciences of the USSR</OrgName><OrgAddress><City>Moscow</City><Country>USSR</Country></OrgAddress></Affiliation></EditorGroup></BookHeader><Part ID="Part3"><PartInfo TocLevels="0"><PartID>3</PartID><PartSequenceNumber>3</PartSequenceNumber><PartTitle>Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide and Silicon</PartTitle><PartChapterCount>6</PartChapterCount><PartContext><SeriesID>10734</SeriesID><BookID>978-1-4615-7548-1</BookID><BookTitle>Optical Properties of Semiconductors</BookTitle></PartContext></PartInfo><PartHeader><AuthorGroup><Author><AuthorName DisplayOrder="Western"><GivenName>L.</GivenName><GivenName>I.</GivenName><FamilyName>Paduchikh</FamilyName></AuthorName></Author></AuthorGroup></PartHeader><Chapter Language="En" ID="Chap11"><ChapterInfo Language="En" ChapterType="OriginalPaper" NumberingStyle="ChapterOnly" TocLevels="0" OutputMedium="All" ContainsESM="No"><ChapterID>11</ChapterID><ChapterNumber>Chapter I</ChapterNumber><ChapterDOI>10.1007/978-1-4615-7548-1_11</ChapterDOI><ChapterSequenceNumber>11</ChapterSequenceNumber><ChapterTitle Language="En">Collective Interactions of Excitons in Semiconductors</ChapterTitle><ChapterFirstPage>134</ChapterFirstPage><ChapterLastPage>135</ChapterLastPage><ChapterCopyright><CopyrightHolderName>Consultants Bureau, New York</CopyrightHolderName><CopyrightYear>1976</CopyrightYear></ChapterCopyright><ChapterHistory><RegistrationDate><Year>2012</Year><Month>4</Month><Day>10</Day></RegistrationDate></ChapterHistory><ChapterGrants Type="Regular"><MetadataGrant Grant="OpenAccess"></MetadataGrant><AbstractGrant Grant="OpenAccess"></AbstractGrant><BodyPDFGrant Grant="Restricted"></BodyPDFGrant><BodyHTMLGrant Grant="Restricted"></BodyHTMLGrant><BibliographyGrant Grant="Restricted"></BibliographyGrant><ESMGrant Grant="Restricted"></ESMGrant></ChapterGrants><ChapterContext><SeriesID>10734</SeriesID><PartID>3</PartID><BookID>978-1-4615-7548-1</BookID><BookTitle>Optical Properties of Semiconductors</BookTitle></ChapterContext></ChapterInfo><ChapterHeader><AuthorGroup><Author AffiliationIDS="Aff3"><AuthorName DisplayOrder="Western"><GivenName>N.</GivenName><GivenName>G.</GivenName><FamilyName>Basov</FamilyName></AuthorName></Author><Affiliation ID="Aff3"><OrgDivision>P. N. Lebedev Physics Institute</OrgDivision><OrgName>Academy of Sciences of the USSR</OrgName><OrgAddress><City>Moscow</City><Country>USSR</Country></OrgAddress></Affiliation></AuthorGroup><Abstract Language="En" ID="Abs1" OutputMedium="Online"><Heading>Abstract</Heading><Para>At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m<Subscript>0</Subscript>-01m<Subscript>0</Subscript>) we can expect formation of excitons with a binding energy. <Emphasis Type="Italic">ε</Emphasis><Subscript>0</Subscript> ≈ 10<Superscript>‒2</Superscript> eV (this is an order-of-magnitude estimate) and a large Bohr radius <Emphasis Type="Italic">(a</Emphasis> ≈ 10<Superscript>‒6</Superscript> cm). The values of <Emphasis Type="Italic">ε</Emphasis><Subscript>0</Subscript> and <Emphasis Type="Italic">a</Emphasis> for each semiconductor can be found from the formulas <Emphasis Type="Italic">ε</Emphasis><Subscript>0</Subscript> = 1/2 e<Superscript>4</Superscript> μ/ ϰ<Superscript>2</Superscript>Ћ<Superscript>2</Superscript> and <Emphasis Type="Italic">a</Emphasis> = ϰ Ћ<Superscript>2</Superscript>V/<Emphasis Type="Italic">μ</Emphasis>e<Superscript>2</Superscript>, where <Emphasis Type="Italic">μ</Emphasis> = m<Subscript>e</Subscript>m<Subscript>h</Subscript>/(m<Subscript>e</Subscript> + m<Subscript>h</Subscript>), m<Subscript>e</Subscript> and m<Subscript>h</Subscript> are the effective masses of an electron and a hole, and m<Subscript>0</Subscript> is the mass of a free electron.</Para></Abstract></ChapterHeader><NoBody></NoBody></Chapter></Part></Book></Series></Publisher></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Collective Interactions of Excitons in Semiconductors</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Collective Interactions of Excitons in Semiconductors</title></titleInfo><name type="personal"><namePart type="given">N.</namePart><namePart type="given">G.</namePart><namePart type="family">Basov</namePart><affiliation>P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, USSR</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre displayLabel="OriginalPaper" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" type="research-article" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-1JC4F85T-7">research-article</genre><originInfo><publisher>Springer US</publisher><place><placeTerm type="text">Boston, MA</placeTerm></place><dateIssued encoding="w3cdtf">1976</dateIssued><copyrightDate encoding="w3cdtf">1976</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><abstract lang="en">Abstract: At low nonequilibrium carrier densities the Coulomb interaction reduces the energy of free particles and produces a stable state characterized by the appearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m0-01m0) we can expect formation of excitons with a binding energy. ε0 ≈ 10‒2 eV (this is an order-of-magnitude estimate) and a large Bohr radius (a ≈ 10‒6 cm). The values of ε0 and a for each semiconductor can be found from the formulas ε0 = 1/2 e4 μ/ ϰ2Ћ2 and a = ϰ Ћ2V/μe2, where μ = memh/(me + mh), me and mh are the effective masses of an electron and a hole, and m0 is the mass of a free electron.</abstract><relatedItem type="host"><titleInfo><title>Optical Properties of Semiconductors</title></titleInfo><name type="personal"><namePart type="given">N.</namePart><namePart type="given">G.</namePart><namePart type="family">Basov</namePart><affiliation>P. N. 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