A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field
Identifieur interne : 001E46 ( Main/Exploration ); précédent : 001E45; suivant : 001E47A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field
Auteurs : K. P. Ghatak ; D. BhattacharyyaSource :
- physica status solidi (b) [ 0370-1972 ] ; 1994-01-01.
Abstract
An attempt is made to study the dia‐ and paramagnetic susceptibilities of electrons in quantum dots of optoelectronic materials in the presence of a parallel magnetic field, on the basis of a newly formulated electron dispersion law. It is found, taking n‐Hg1−xCdxTe and In1−xGaxAsyP1−y lattice‐matched InP as examples that both susceptibilities increase with increasing electron concentration in oscillatory manners and increase monotonically with decreasing film thickness in the electric quantum limit. In addition, the numerical values of the susceptibilities in quaternary materials are greater than in the ternary compounds.
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DOI: 10.1002/pssb.2221810114
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<front><div type="abstract" xml:lang="en">An attempt is made to study the dia‐ and paramagnetic susceptibilities of electrons in quantum dots of optoelectronic materials in the presence of a parallel magnetic field, on the basis of a newly formulated electron dispersion law. It is found, taking n‐Hg1−xCdxTe and In1−xGaxAsyP1−y lattice‐matched InP as examples that both susceptibilities increase with increasing electron concentration in oscillatory manners and increase monotonically with decreasing film thickness in the electric quantum limit. In addition, the numerical values of the susceptibilities in quaternary materials are greater than in the ternary compounds.</div>
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