A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field
Identifieur interne : 000754 ( Istex/Corpus ); précédent : 000753; suivant : 000755A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field
Auteurs : K. P. Ghatak ; D. BhattacharyyaSource :
- physica status solidi (b) [ 0370-1972 ] ; 1994-01-01.
Abstract
An attempt is made to study the dia‐ and paramagnetic susceptibilities of electrons in quantum dots of optoelectronic materials in the presence of a parallel magnetic field, on the basis of a newly formulated electron dispersion law. It is found, taking n‐Hg1−xCdxTe and In1−xGaxAsyP1−y lattice‐matched InP as examples that both susceptibilities increase with increasing electron concentration in oscillatory manners and increase monotonically with decreasing film thickness in the electric quantum limit. In addition, the numerical values of the susceptibilities in quaternary materials are greater than in the ternary compounds.
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DOI: 10.1002/pssb.2221810114
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P.</givenNames><familyName>Ghatak</familyName></personName></creator><creator xml:id="au2" creatorRole="author" affiliationRef="#af1" noteRef="#fn2"><personName><givenNames>D.</givenNames><familyName>Bhattacharyya</familyName></personName></creator></creators><affiliationGroup><affiliation xml:id="af1" countryCode="IN" type="organization"><unparsedAffiliation>Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta<link href="#fn1"></link></unparsedAffiliation></affiliation></affiliationGroup><abstractGroup><abstract type="main" xml:lang="en"><title type="main">Abstract</title><p>An attempt is made to study the dia‐ and paramagnetic susceptibilities of electrons in quantum dots of optoelectronic materials in the presence of a parallel magnetic field, on the basis of a newly formulated electron dispersion law. It is found, taking n‐Hg<sub>1−x</sub>Cd<sub>x</sub>Te and In<sub>1−x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1−y</sub> lattice‐matched InP as examples that both susceptibilities increase with increasing electron concentration in oscillatory manners and increase monotonically with decreasing film thickness in the electric quantum limit. In addition, the numerical values of the susceptibilities in quaternary materials are greater than in the ternary compounds.</p></abstract></abstractGroup></contentMeta><noteGroup><note xml:id="fn2"><p>Central Electronics Engineering Research Institute, Pulani 333031, Rajastan, India.</p></note><note xml:id="fn1"><p>Calcutta 700032, India.</p></note></noteGroup></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field</title></titleInfo><titleInfo type="abbreviated" lang="en"><title>A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field</title></titleInfo><name type="personal"><namePart type="given">K. P.</namePart><namePart type="family">Ghatak</namePart><affiliation>Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">D.</namePart><namePart type="family">Bhattacharyya</namePart><affiliation>Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta</affiliation><description>Central Electronics Engineering Research Institute, Pulani 333031, Rajastan, India.</description><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="article" displayLabel="article" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-6N5SZHKN-D">article</genre><originInfo><publisher>WILEY‐VCH Verlag</publisher><place><placeTerm type="text">Berlin</placeTerm></place><dateIssued encoding="w3cdtf">1994-01-01</dateIssued><dateCaptured encoding="w3cdtf">1993-06-10</dateCaptured><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><extent unit="figures">2</extent><extent unit="tables">0</extent><extent unit="references">14</extent></physicalDescription><abstract lang="en">An attempt is made to study the dia‐ and paramagnetic susceptibilities of electrons in quantum dots of optoelectronic materials in the presence of a parallel magnetic field, on the basis of a newly formulated electron dispersion law. It is found, taking n‐Hg1−xCdxTe and In1−xGaxAsyP1−y lattice‐matched InP as examples that both susceptibilities increase with increasing electron concentration in oscillatory manners and increase monotonically with decreasing film thickness in the electric quantum limit. In addition, the numerical values of the susceptibilities in quaternary materials are greater than in the ternary compounds.</abstract><relatedItem type="host"><titleInfo><title>physica status solidi (b)</title></titleInfo><titleInfo type="abbreviated"><title>phys. stat. sol. 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Phys. 69, 1666 (1991) and references cited therein.</note><name type="personal"><namePart type="given">K. P.</namePart><namePart type="family">Ghatak</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Mondal</namePart><role><roleTerm type="text">author</roleTerm></role></name><part><date>1991</date><detail type="volume"><caption>vol.</caption><number>69</number></detail><extent unit="pages"><start>1666</start></extent></part></relatedItem><relatedItem type="references" displayLabel="cit2"><titleInfo><title>Festkörperprobleme</title></titleInfo><genre>journal-article</genre><note type="citation/reference">N. T. Ninch, Festkörperprobleme 23, 227 (1983).</note><name type="personal"><namePart type="given">N. 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