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Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)

Identifieur interne : 001D21 ( Main/Exploration ); précédent : 001D20; suivant : 001D22

Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)

Auteurs : M.-J Tsai [République populaire de Chine] ; F.-S Wang [République populaire de Chine] ; K.-L Cheng [République populaire de Chine] ; S.-Y Wang [République populaire de Chine] ; M.-S Feng [République populaire de Chine] ; H.-C Cheng [République populaire de Chine]

Source :

Solid State Electronics [ 0038-1101 ] ; 1995.

RBID : ISTEX:72F64456945F5C7EFDB56B18533F0D6D73A9CA64

English descriptors

Teeft :
- Active layer, Additive, Average grain size, Better device performances, Chamber pressure, Chamber pressures, Channel length, Channel width, Collision probability, Current ratio, Device characteristics, Different grain structures, Drain voltage, Electrical characteristics, Electron device, Electron devices, Experimental results show, Film structures, Flow rate, Flow rates, Gate voltage, Grain boundaries, Hydrogen plasma, Hydrogen radicals, Hydrogenation, Ieee, Ieee electron device lett, Ieee trans, Minimum drain, Minimum drain currents, Molecular fractions, Nitrogen additives, Nitrogen atoms, Nitrogen plasma, Nitrogen radicals, Passivated, Passivated samples, Passivated specimens, Passivation, Passivation effect, Passivation effects, Plasma, Plasma conditions, Plasma hydrogenation, Plasma passivation, Plasma reactor, Plasma treatment, Plasma treatments, Power densities, Power density, Radical collision, Science council, Significant improvement, Substrate heating, Substrate heating temperature, Substrate temperature, Tfts, Threshold voltage, Transfer curves, Trap state density, Various grain structures.

Abstract

Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2 N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures.

Url:

https://api.istex.fr/ark:/67375/6H6-398N4HKK-5/fulltext.pdf

DOI: 10.1016/0038-1101(94)00241-7

Affiliations:

République populaire de Chine

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Le document en format XML

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<author><name sortKey="Wang, S Y" sort="Wang, S Y" uniqKey="Wang S" first="S.-Y" last="Wang">S.-Y Wang</name>
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<term>Better device performances</term>
<term>Chamber pressure</term>
<term>Chamber pressures</term>
<term>Channel length</term>
<term>Channel width</term>
<term>Collision probability</term>
<term>Current ratio</term>
<term>Device characteristics</term>
<term>Different grain structures</term>
<term>Drain voltage</term>
<term>Electrical characteristics</term>
<term>Electron device</term>
<term>Electron devices</term>
<term>Experimental results show</term>
<term>Film structures</term>
<term>Flow rate</term>
<term>Flow rates</term>
<term>Gate voltage</term>
<term>Grain boundaries</term>
<term>Hydrogen plasma</term>
<term>Hydrogen radicals</term>
<term>Hydrogenation</term>
<term>Ieee</term>
<term>Ieee electron device lett</term>
<term>Ieee trans</term>
<term>Minimum drain</term>
<term>Minimum drain currents</term>
<term>Molecular fractions</term>
<term>Nitrogen additives</term>
<term>Nitrogen atoms</term>
<term>Nitrogen plasma</term>
<term>Nitrogen radicals</term>
<term>Passivated</term>
<term>Passivated samples</term>
<term>Passivated specimens</term>
<term>Passivation</term>
<term>Passivation effect</term>
<term>Passivation effects</term>
<term>Plasma</term>
<term>Plasma conditions</term>
<term>Plasma hydrogenation</term>
<term>Plasma passivation</term>
<term>Plasma reactor</term>
<term>Plasma treatment</term>
<term>Plasma treatments</term>
<term>Power densities</term>
<term>Power density</term>
<term>Radical collision</term>
<term>Science council</term>
<term>Significant improvement</term>
<term>Substrate heating</term>
<term>Substrate heating temperature</term>
<term>Substrate temperature</term>
<term>Tfts</term>
<term>Threshold voltage</term>
<term>Transfer curves</term>
<term>Trap state density</term>
<term>Various grain structures</term>
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<front><div type="abstract" xml:lang="en">Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2 N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures.</div>
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Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)

Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)

Source :

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

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Pour manipuler ce document sous Unix (Dilib)

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