Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)
Identifieur interne : 001082 ( Istex/Corpus ); précédent : 001081; suivant : 001083Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)
Auteurs : M.-J Tsai ; F.-S Wang ; K.-L Cheng ; S.-Y Wang ; M.-S Feng ; H.-C ChengSource :
- Solid State Electronics [ 0038-1101 ] ; 1995.
English descriptors
- Teeft :
- Active layer, Additive, Average grain size, Better device performances, Chamber pressure, Chamber pressures, Channel length, Channel width, Collision probability, Current ratio, Device characteristics, Different grain structures, Drain voltage, Electrical characteristics, Electron device, Electron devices, Experimental results show, Film structures, Flow rate, Flow rates, Gate voltage, Grain boundaries, Hydrogen plasma, Hydrogen radicals, Hydrogenation, Ieee, Ieee electron device lett, Ieee trans, Minimum drain, Minimum drain currents, Molecular fractions, Nitrogen additives, Nitrogen atoms, Nitrogen plasma, Nitrogen radicals, Passivated, Passivated samples, Passivated specimens, Passivation, Passivation effect, Passivation effects, Plasma, Plasma conditions, Plasma hydrogenation, Plasma passivation, Plasma reactor, Plasma treatment, Plasma treatments, Power densities, Power density, Radical collision, Science council, Significant improvement, Substrate heating, Substrate heating temperature, Substrate temperature, Tfts, Threshold voltage, Transfer curves, Trap state density, Various grain structures.
Abstract
Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2 N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures.
Url:
DOI: 10.1016/0038-1101(94)00241-7
Links to Exploration step
ISTEX:72F64456945F5C7EFDB56B18533F0D6D73A9CA64Le document en format XML
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China</mods:affiliation></affiliation></author><author><name sortKey="Feng, M S" sort="Feng, M S" uniqKey="Feng M" first="M.-S" last="Feng">M.-S Feng</name><affiliation><mods:affiliation>Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</mods:affiliation></affiliation></author><author><name sortKey="Cheng, H C" sort="Cheng, H C" uniqKey="Cheng H" first="H.-C" last="Cheng">H.-C Cheng</name><affiliation><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Solid State Electronics</title><title level="j" type="abbrev">SSE</title><idno type="ISSN">0038-1101</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1995">1995</date><biblScope unit="volume">38</biblScope><biblScope unit="issue">6</biblScope><biblScope unit="page" from="1233">1233</biblScope><biblScope unit="page" to="1238">1238</biblScope></imprint><idno type="ISSN">0038-1101</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0038-1101</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="Teeft" xml:lang="en"><term>Active layer</term><term>Additive</term><term>Average grain size</term><term>Better device performances</term><term>Chamber pressure</term><term>Chamber pressures</term><term>Channel length</term><term>Channel width</term><term>Collision probability</term><term>Current ratio</term><term>Device characteristics</term><term>Different grain structures</term><term>Drain voltage</term><term>Electrical characteristics</term><term>Electron device</term><term>Electron devices</term><term>Experimental results show</term><term>Film structures</term><term>Flow rate</term><term>Flow rates</term><term>Gate voltage</term><term>Grain boundaries</term><term>Hydrogen plasma</term><term>Hydrogen radicals</term><term>Hydrogenation</term><term>Ieee</term><term>Ieee electron device lett</term><term>Ieee trans</term><term>Minimum drain</term><term>Minimum drain currents</term><term>Molecular fractions</term><term>Nitrogen additives</term><term>Nitrogen atoms</term><term>Nitrogen plasma</term><term>Nitrogen radicals</term><term>Passivated</term><term>Passivated samples</term><term>Passivated specimens</term><term>Passivation</term><term>Passivation effect</term><term>Passivation effects</term><term>Plasma</term><term>Plasma conditions</term><term>Plasma hydrogenation</term><term>Plasma passivation</term><term>Plasma reactor</term><term>Plasma treatment</term><term>Plasma treatments</term><term>Power densities</term><term>Power density</term><term>Radical collision</term><term>Science council</term><term>Significant improvement</term><term>Substrate heating</term><term>Substrate heating temperature</term><term>Substrate temperature</term><term>Tfts</term><term>Threshold voltage</term><term>Transfer curves</term><term>Trap state density</term><term>Various grain structures</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. 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China</json:string></affiliations></json:item><json:item><name>F.-S Wang</name><affiliations><json:string>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</json:string></affiliations></json:item><json:item><name>K.-L Cheng</name><affiliations><json:string>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</json:string></affiliations></json:item><json:item><name>S.-Y Wang</name><affiliations><json:string>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</json:string></affiliations></json:item><json:item><name>M.-S Feng</name><affiliations><json:string>Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</json:string></affiliations></json:item><json:item><name>H.-C Cheng</name><affiliations><json:string>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</json:string></affiliations></json:item></author><arkIstex>ark:/67375/6H6-398N4HKK-5</arkIstex><language><json:string>eng</json:string></language><originalGenre><json:string>Full-length article</json:string></originalGenre><abstract>Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. 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China</affiliation></author><author xml:id="author-0001"><persName><forename type="first">F.-S</forename><surname>Wang</surname></persName><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation></author><author xml:id="author-0002"><persName><forename type="first">K.-L</forename><surname>Cheng</surname></persName><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation></author><author xml:id="author-0003"><persName><forename type="first">S.-Y</forename><surname>Wang</surname></persName><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation></author><author xml:id="author-0004"><persName><forename type="first">M.-S</forename><surname>Feng</surname></persName><affiliation>Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation></author><author xml:id="author-0005"><persName><forename type="first">H.-C</forename><surname>Cheng</surname></persName><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation></author><idno type="istex">72F64456945F5C7EFDB56B18533F0D6D73A9CA64</idno><idno type="ark">ark:/67375/6H6-398N4HKK-5</idno><idno type="DOI">10.1016/0038-1101(94)00241-7</idno><idno type="PII">0038-1101(94)00241-7</idno></analytic><monogr><title level="j">Solid State Electronics</title><title level="j" type="abbrev">SSE</title><idno type="pISSN">0038-1101</idno><idno type="PII">S0038-1101(00)X0016-0</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1995"></date><biblScope unit="volume">38</biblScope><biblScope unit="issue">6</biblScope><biblScope unit="page" from="1233">1233</biblScope><biblScope unit="page" to="1238">1238</biblScope></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1995</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2 N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures.</p></abstract></profileDesc><revisionDesc><change when="1994-08-09">Modified</change><change when="1995">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/ark:/67375/6H6-398N4HKK-5/fulltext.txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>SSE</jid><aid>94002417</aid><ce:pii>0038-1101(94)00241-7</ce:pii><ce:doi>10.1016/0038-1101(94)00241-7</ce:doi><ce:copyright type="unknown" year="1995"></ce:copyright></item-info><head><ce:dochead><ce:textfn>Invited paper</ce:textfn></ce:dochead><ce:title>Characterization of <math altimg="si1.gif"><fr shape="sol"><nu><rm>H</rm><inf>2</inf></nu><de><rm>N</rm><inf>2</inf></de></fr></math> plasma passivation process for poly-Si thin film transistors (TFTs)</ce:title><ce:author-group><ce:author><ce:given-name>M.-J</ce:given-name><ce:surname>Tsai</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>F.-S</ce:given-name><ce:surname>Wang</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>K.-L</ce:given-name><ce:surname>Cheng</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>S.-Y</ce:given-name><ce:surname>Wang</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>M.-S</ce:given-name><ce:surname>Feng</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>2</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>H.-C</ce:given-name><ce:surname>Cheng</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</ce:textfn></ce:affiliation><ce:affiliation id="AFF2"><ce:label>b</ce:label><ce:textfn>Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</ce:textfn></ce:affiliation></ce:author-group><ce:date-received day="15" month="2" year="1994"></ce:date-received><ce:date-revised day="9" month="8" year="1994"></ce:date-revised><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen (<math altimg="si2.gif"><fr shape="sol"><nu><rm>H</rm><inf>2</inf></nu><de><rm>N</rm><inf>2</inf></de></fr></math>) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H<ce:inf>2</ce:inf> hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the <math altimg="si3.gif"><fr shape="sol"><nu><rm>H</rm><inf>2</inf></nu><de><rm>N</rm><inf>2</inf></de></fr></math> plasma were also utilized to passivate the poly-Si TFTs with different grain structures.</ce:simple-para></ce:abstract-sec></ce:abstract></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Characterization of</title></titleInfo><name type="personal"><namePart type="given">M.-J</namePart><namePart type="family">Tsai</namePart><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">F.-S</namePart><namePart type="family">Wang</namePart><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">K.-L</namePart><namePart type="family">Cheng</namePart><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">S.-Y</namePart><namePart type="family">Wang</namePart><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">M.-S</namePart><namePart type="family">Feng</namePart><affiliation>Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">H.-C</namePart><namePart type="family">Cheng</namePart><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O. China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-1JC4F85T-7">research-article</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1995</dateIssued><dateModified encoding="w3cdtf">1994-08-09</dateModified><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><abstract lang="en">Abstract: The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen ( H2 N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2 N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures.</abstract><note type="content">Section title: Invited paper</note><relatedItem type="host"><titleInfo><title>Solid State Electronics</title></titleInfo><titleInfo type="abbreviated"><title>SSE</title></titleInfo><genre type="journal" authority="ISTEX" authorityURI="https://publication-type.data.istex.fr" valueURI="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1995</dateIssued></originInfo><identifier type="ISSN">0038-1101</identifier><identifier type="PII">S0038-1101(00)X0016-0</identifier><part><date>1995</date><detail type="volume"><number>38</number><caption>vol.</caption></detail><detail type="issue"><number>6</number><caption>no.</caption></detail><extent unit="issue-pages"><start>1121</start><end>1284</end></extent><extent unit="pages"><start>1233</start><end>1238</end></extent></part></relatedItem><identifier type="istex">72F64456945F5C7EFDB56B18533F0D6D73A9CA64</identifier><identifier type="ark">ark:/67375/6H6-398N4HKK-5</identifier><identifier type="DOI">10.1016/0038-1101(94)00241-7</identifier><identifier type="PII">0038-1101(94)00241-7</identifier><recordInfo><recordContentSource authority="ISTEX" authorityURI="https://loaded-corpus.data.istex.fr" valueURI="https://loaded-corpus.data.istex.fr/ark:/67375/XBH-HKKZVM7B-M">elsevier</recordContentSource></recordInfo></mods><json:item><extension>json</extension><original>false</original><mimetype>application/json</mimetype><uri>https://api.istex.fr/ark:/67375/6H6-398N4HKK-5/record.json</uri></json:item></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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