Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
Identifieur interne : 002853 ( Ncbi/Curation ); précédent : 002852; suivant : 002854Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
Auteurs : V G Dubrovskii [Russie] ; T. Xu [France] ; A Díaz Álvarez [France] ; S R Plissard [France] ; P. Caroff [France] ; F. Glas [France] ; B. Grandidier [France]Source :
- Nano letters [ 1530-6992 ] ; 2015.
Abstract
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
DOI: 10.1021/acs.nanolett.5b02226
PubMed: 26189571
Links toward previous steps (curation, corpus...)
- to stream PubMed, to step Corpus: Pour aller vers cette notice dans l'étape Curation :002A52
- to stream PubMed, to step Curation: Pour aller vers cette notice dans l'étape Curation :002982
- to stream PubMed, to step Checkpoint: Pour aller vers cette notice dans l'étape Curation :002982
- to stream Ncbi, to step Merge: Pour aller vers cette notice dans l'étape Curation :002853
Links to Exploration step
pubmed:26189571Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.</title>
<author><name sortKey="Dubrovskii, V G" sort="Dubrovskii, V G" uniqKey="Dubrovskii V" first="V G" last="Dubrovskii">V G Dubrovskii</name>
<affiliation wicri:level="1"><nlm:affiliation>†St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia.</nlm:affiliation>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>†St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xu, T" sort="Xu, T" uniqKey="Xu T" first="T" last="Xu">T. Xu</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Alvarez, A Diaz" sort="Alvarez, A Diaz" uniqKey="Alvarez A" first="A Díaz" last="Álvarez">A Díaz Álvarez</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Plissard, S R" sort="Plissard, S R" uniqKey="Plissard S" first="S R" last="Plissard">S R Plissard</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Caroff, P" sort="Caroff, P" uniqKey="Caroff P" first="P" last="Caroff">P. Caroff</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Glas, F" sort="Glas, F" uniqKey="Glas F" first="F" last="Glas">F. Glas</name>
<affiliation wicri:level="1"><nlm:affiliation>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis</wicri:regionArea>
<wicri:noRegion>91460 Marcoussis</wicri:noRegion>
<wicri:noRegion>91460 Marcoussis</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Grandidier, B" sort="Grandidier, B" uniqKey="Grandidier B" first="B" last="Grandidier">B. Grandidier</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">PubMed</idno>
<date when="2015">2015</date>
<idno type="RBID">pubmed:26189571</idno>
<idno type="pmid">26189571</idno>
<idno type="doi">10.1021/acs.nanolett.5b02226</idno>
<idno type="wicri:Area/PubMed/Corpus">002A52</idno>
<idno type="wicri:explorRef" wicri:stream="PubMed" wicri:step="Corpus" wicri:corpus="PubMed">002A52</idno>
<idno type="wicri:Area/PubMed/Curation">002982</idno>
<idno type="wicri:explorRef" wicri:stream="PubMed" wicri:step="Curation">002982</idno>
<idno type="wicri:Area/PubMed/Checkpoint">002982</idno>
<idno type="wicri:explorRef" wicri:stream="Checkpoint" wicri:step="PubMed">002982</idno>
<idno type="wicri:Area/Ncbi/Merge">002853</idno>
<idno type="wicri:Area/Ncbi/Curation">002853</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en">Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.</title>
<author><name sortKey="Dubrovskii, V G" sort="Dubrovskii, V G" uniqKey="Dubrovskii V" first="V G" last="Dubrovskii">V G Dubrovskii</name>
<affiliation wicri:level="1"><nlm:affiliation>†St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia.</nlm:affiliation>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>†St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xu, T" sort="Xu, T" uniqKey="Xu T" first="T" last="Xu">T. Xu</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Alvarez, A Diaz" sort="Alvarez, A Diaz" uniqKey="Alvarez A" first="A Díaz" last="Álvarez">A Díaz Álvarez</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Plissard, S R" sort="Plissard, S R" uniqKey="Plissard S" first="S R" last="Plissard">S R Plissard</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Caroff, P" sort="Caroff, P" uniqKey="Caroff P" first="P" last="Caroff">P. Caroff</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Glas, F" sort="Glas, F" uniqKey="Glas F" first="F" last="Glas">F. Glas</name>
<affiliation wicri:level="1"><nlm:affiliation>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis</wicri:regionArea>
<wicri:noRegion>91460 Marcoussis</wicri:noRegion>
<wicri:noRegion>91460 Marcoussis</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Grandidier, B" sort="Grandidier, B" uniqKey="Grandidier B" first="B" last="Grandidier">B. Grandidier</name>
<affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
<wicri:noRegion>59046 Lille Cedex</wicri:noRegion>
</affiliation>
</author>
</analytic>
<series><title level="j">Nano letters</title>
<idno type="eISSN">1530-6992</idno>
<imprint><date when="2015" type="published">2015</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
</fileDesc>
<profileDesc><textClass></textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.</div>
</front>
</TEI>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Asie/explor/AustralieFrV1/Data/Ncbi/Curation
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002853 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Ncbi/Curation/biblio.hfd -nk 002853 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= Wicri/Asie |area= AustralieFrV1 |flux= Ncbi |étape= Curation |type= RBID |clé= pubmed:26189571 |texte= Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. }}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Ncbi/Curation/RBID.i -Sk "pubmed:26189571" \ | HfdSelect -Kh $EXPLOR_AREA/Data/Ncbi/Curation/biblio.hfd \ | NlmPubMed2Wicri -a AustralieFrV1
![]() | This area was generated with Dilib version V0.6.33. | ![]() |