Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
Identifieur interne : 002982 ( PubMed/Curation ); précédent : 002981; suivant : 002983Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
Auteurs : V G Dubrovskii [Russie] ; T. Xu [France] ; A Díaz Álvarez [France] ; S R Plissard [France] ; P. Caroff [France] ; F. Glas [France] ; B. Grandidier [France]Source :
- Nano letters [ 1530-6992 ] ; 2015.
Abstract
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
DOI: 10.1021/acs.nanolett.5b02226
PubMed: 26189571
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Caroff</name><affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea></affiliation></author><author><name sortKey="Glas, F" sort="Glas, F" uniqKey="Glas F" first="F" last="Glas">F. Glas</name><affiliation wicri:level="1"><nlm:affiliation>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis</wicri:regionArea></affiliation></author><author><name sortKey="Grandidier, B" sort="Grandidier, B" uniqKey="Grandidier B" first="B" last="Grandidier">B. Grandidier</name><affiliation wicri:level="1"><nlm:affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex</wicri:regionArea></affiliation></author></analytic><series><title level="j">Nano letters</title><idno type="eISSN">1530-6992</idno><imprint><date when="2015" type="published">2015</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.</div></front></TEI><pubmed><MedlineCitation Status="PubMed-not-MEDLINE" Owner="NLM"><PMID Version="1">26189571</PMID><DateCreated><Year>2015</Year><Month>08</Month><Day>12</Day></DateCreated><DateCompleted><Year>2015</Year><Month>12</Month><Day>03</Day></DateCompleted><DateRevised><Year>2015</Year><Month>08</Month><Day>12</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1530-6992</ISSN><JournalIssue CitedMedium="Internet"><Volume>15</Volume><Issue>8</Issue><PubDate><Year>2015</Year><Month>Aug</Month><Day>12</Day></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.</ArticleTitle><Pagination><MedlinePgn>5580-4</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/acs.nanolett.5b02226</ELocationID><Abstract><AbstractText>Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Dubrovskii</LastName><ForeName>V G</ForeName><Initials>VG</Initials><AffiliationInfo><Affiliation>†St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>‡Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>§ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Xu</LastName><ForeName>T</ForeName><Initials>T</Initials><AffiliationInfo><Affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>⊥Sino-European School of Technology, Shanghai University, 99 Shangda Road, Shanghai, 200444, People's Republic of China.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Álvarez</LastName><ForeName>A Díaz</ForeName><Initials>AD</Initials><AffiliationInfo><Affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Plissard</LastName><ForeName>S R</ForeName><Initials>SR</Initials><AffiliationInfo><Affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>#CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse, 7 avenue du colonel Roche, 31400 Toulouse, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Caroff</LastName><ForeName>P</ForeName><Initials>P</Initials><AffiliationInfo><Affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>∇Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Glas</LastName><ForeName>F</ForeName><Initials>F</Initials><AffiliationInfo><Affiliation>○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Grandidier</LastName><ForeName>B</ForeName><Initials>B</Initials><AffiliationInfo><Affiliation>∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.</Affiliation></AffiliationInfo></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType><PublicationType UI="D013485">Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2015</Year><Month>07</Month><Day>22</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">III−V nanowires</Keyword><Keyword MajorTopicYN="N">focusing effect</Keyword><Keyword MajorTopicYN="N">growth kinetics</Keyword><Keyword MajorTopicYN="N">self-catalyzed growth</Keyword><Keyword MajorTopicYN="N">silicon integration</Keyword><Keyword MajorTopicYN="N">size distribution</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2015</Year><Month>7</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2015</Year><Month>7</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2015</Year><Month>7</Month><Day>21</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">26189571</ArticleId><ArticleId IdType="doi">10.1021/acs.nanolett.5b02226</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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