Few electron limit of n-type metal oxide semiconductor single electron transistors
Identifieur interne : 000463 ( Istex/Checkpoint ); précédent : 000462; suivant : 000464Few electron limit of n-type metal oxide semiconductor single electron transistors
Auteurs : Enrico Prati [Italie] ; Marco De Michielis [Italie] ; Matteo Belli [Italie] ; Simone Cocco [Italie] ; Marco Fanciulli [Italie] ; Dharmraj Kotekar-Patil [Allemagne] ; Matthias Ruoff [Allemagne] ; Dieter P. Kern [Allemagne] ; David A. Wharam [Allemagne] ; Jan Verduijn [Pays-Bas, Australie] ; Giuseppe C. Tettamanzi [Pays-Bas, Australie] ; Sven Rogge [Pays-Bas, Australie] ; Benoit Roche [France] ; Romain Wacquez [France] ; Xavier Jehl [France] ; Maud Vinet [France] ; Marc Sanquer [France]Source :
- Nanotechnology [ 0957-4484 ] ; 2012-06-01.
Descripteurs français
- Wicri :
- topic : Nanotechnologie, Oxyde, Simulation.
English descriptors
- KwdEn :
- Accumulation channel, Addition energies, Addition energy, Appl, Central planes, Cmos, Cmos technology, Complementary metal oxide semiconductor, Coulomb, Drain contacts, Electron beam lithography, Electron density, Electron occupancy, Electronic transport, Gate length, Gate level patterning, Gate voltage, High addition energies, Interface roughness, Lett, Metal oxide silicon sets, Nanotechnology, Nanowire, Nitride spacers, Oxide, Oxide thickness, Phys, Quantum, Quantum circuits, Quantum transport, Room temperature, Silicon, Silicon dioxide, Silicon nanowire, Silicon quantum, Silicon thickness, Similar samples, Simulation, Single electron transistors, Threshold voltage, Transistor.
- Teeft :
- Accumulation channel, Addition energies, Addition energy, Appl, Central planes, Cmos, Cmos technology, Complementary metal oxide semiconductor, Coulomb, Drain contacts, Electron beam lithography, Electron density, Electron occupancy, Electronic transport, Gate length, Gate level patterning, Gate voltage, High addition energies, Interface roughness, Lett, Metal oxide silicon sets, Nanotechnology, Nanowire, Nitride spacers, Oxide, Oxide thickness, Phys, Quantum, Quantum circuits, Quantum transport, Room temperature, Silicon, Silicon dioxide, Silicon nanowire, Silicon quantum, Silicon thickness, Similar samples, Simulation, Single electron transistors, Threshold voltage, Transistor.
Abstract
We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10nm on 200mm wafers. The nominal channel size of 2020nm2 is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.
Url:
DOI: 10.1088/0957-4484/23/21/215204
Affiliations:
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Kern</name><affiliation wicri:level="1"><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Applied Physics, Universitt Tbingen, Auf der Morgenstelle 10, 72076 Tbingen</wicri:regionArea><wicri:noRegion>72076 Tbingen</wicri:noRegion><wicri:noRegion>72076 Tbingen</wicri:noRegion></affiliation></author><author><name sortKey="Wharam, David A" sort="Wharam, David A" uniqKey="Wharam D" first="David A" last="Wharam">David A. 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Tettamanzi</name><affiliation wicri:level="1"><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft</wicri:regionArea><wicri:noRegion>2628 CJ Delft</wicri:noRegion></affiliation><affiliation wicri:level="1"><country xml:lang="fr">Australie</country><wicri:regionArea>Centre for Quantum Computation and Communication Technology, School of Physics, University of New SouthWales, Sydney, New South Wales 2052</wicri:regionArea><wicri:noRegion>New South Wales 2052</wicri:noRegion></affiliation></author><author><name sortKey="Rogge, Sven" sort="Rogge, Sven" uniqKey="Rogge S" first="Sven" last="Rogge">Sven Rogge</name><affiliation wicri:level="1"><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft</wicri:regionArea><wicri:noRegion>2628 CJ Delft</wicri:noRegion></affiliation><affiliation wicri:level="1"><country xml:lang="fr">Australie</country><wicri:regionArea>Centre for Quantum Computation and Communication Technology, School of Physics, University of New SouthWales, Sydney, New South Wales 2052</wicri:regionArea><wicri:noRegion>New South Wales 2052</wicri:noRegion></affiliation></author><author><name sortKey="Roche, Benoit" sort="Roche, Benoit" uniqKey="Roche B" first="Benoit" last="Roche">Benoit Roche</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Service de Physique Statistique, Magntisme et Supraconductivit, Institut Nanosciences et Cryognie,Commissariat lnergie Atomique Grenoble and Universit Joseph Fourier, F-38054 Grenoble</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne-Rhône-Alpes</region><region type="old region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Wacquez, Romain" sort="Wacquez, Romain" 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last="Sanquer">Marc Sanquer</name><affiliation wicri:level="1"><country xml:lang="fr">France</country><wicri:regionArea>Service de Physique Statistique, Magntisme et Supraconductivit, Institut Nanosciences et Cryognie,Commissariat lnergie Atomique Grenoble and Universit Joseph Fourier, F-38054 Grenoble</wicri:regionArea><wicri:noRegion>38054 Grenoble</wicri:noRegion><wicri:noRegion>F-38054 Grenoble</wicri:noRegion></affiliation><affiliation wicri:level="1"><country wicri:rule="url">France</country></affiliation></author></analytic><monogr></monogr><series><title level="j">Nanotechnology</title><idno type="ISSN">0957-4484</idno><idno type="eISSN">1361-6528</idno><imprint><publisher>IOP Publishing</publisher><date type="published" when="2012-06-01">2012-06-01</date><biblScope unit="volume">23</biblScope><biblScope unit="issue">21</biblScope></imprint><idno type="ISSN">0957-4484</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0957-4484</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Accumulation channel</term><term>Addition energies</term><term>Addition energy</term><term>Appl</term><term>Central planes</term><term>Cmos</term><term>Cmos technology</term><term>Complementary metal oxide semiconductor</term><term>Coulomb</term><term>Drain contacts</term><term>Electron beam lithography</term><term>Electron density</term><term>Electron occupancy</term><term>Electronic transport</term><term>Gate length</term><term>Gate level patterning</term><term>Gate voltage</term><term>High addition energies</term><term>Interface roughness</term><term>Lett</term><term>Metal oxide silicon sets</term><term>Nanotechnology</term><term>Nanowire</term><term>Nitride spacers</term><term>Oxide</term><term>Oxide thickness</term><term>Phys</term><term>Quantum</term><term>Quantum circuits</term><term>Quantum transport</term><term>Room temperature</term><term>Silicon</term><term>Silicon dioxide</term><term>Silicon nanowire</term><term>Silicon quantum</term><term>Silicon thickness</term><term>Similar samples</term><term>Simulation</term><term>Single electron transistors</term><term>Threshold voltage</term><term>Transistor</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Accumulation channel</term><term>Addition energies</term><term>Addition energy</term><term>Appl</term><term>Central planes</term><term>Cmos</term><term>Cmos technology</term><term>Complementary metal oxide semiconductor</term><term>Coulomb</term><term>Drain contacts</term><term>Electron beam lithography</term><term>Electron density</term><term>Electron occupancy</term><term>Electronic transport</term><term>Gate length</term><term>Gate level patterning</term><term>Gate voltage</term><term>High addition energies</term><term>Interface roughness</term><term>Lett</term><term>Metal oxide silicon sets</term><term>Nanotechnology</term><term>Nanowire</term><term>Nitride spacers</term><term>Oxide</term><term>Oxide thickness</term><term>Phys</term><term>Quantum</term><term>Quantum circuits</term><term>Quantum transport</term><term>Room temperature</term><term>Silicon</term><term>Silicon dioxide</term><term>Silicon nanowire</term><term>Silicon quantum</term><term>Silicon thickness</term><term>Similar samples</term><term>Simulation</term><term>Single electron transistors</term><term>Threshold voltage</term><term>Transistor</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nanotechnologie</term><term>Oxyde</term><term>Simulation</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract">We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10nm on 200mm wafers. The nominal channel size of 2020nm2 is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.</div></front></TEI><affiliations><list><country><li>Allemagne</li><li>Australie</li><li>France</li><li>Italie</li><li>Pays-Bas</li></country><region><li>Auvergne-Rhône-Alpes</li><li>Rhône-Alpes</li></region><settlement><li>Grenoble</li></settlement></list><tree><country name="Italie"><noRegion><name sortKey="Prati, Enrico" sort="Prati, Enrico" uniqKey="Prati E" first="Enrico" last="Prati">Enrico Prati</name></noRegion><name sortKey="Belli, Matteo" sort="Belli, Matteo" uniqKey="Belli M" first="Matteo" last="Belli">Matteo Belli</name><name sortKey="Cocco, Simone" sort="Cocco, Simone" uniqKey="Cocco S" first="Simone" last="Cocco">Simone Cocco</name><name sortKey="De Michielis, Marco" sort="De Michielis, Marco" uniqKey="De Michielis M" first="Marco" last="De Michielis">Marco De Michielis</name><name sortKey="Fanciulli, Marco" sort="Fanciulli, Marco" uniqKey="Fanciulli M" first="Marco" last="Fanciulli">Marco Fanciulli</name><name sortKey="Fanciulli, Marco" sort="Fanciulli, Marco" uniqKey="Fanciulli M" first="Marco" last="Fanciulli">Marco Fanciulli</name><name sortKey="Prati, Enrico" sort="Prati, Enrico" uniqKey="Prati E" first="Enrico" last="Prati">Enrico Prati</name></country><country name="Allemagne"><noRegion><name sortKey="Kotekar Patil, Dharmraj" sort="Kotekar Patil, Dharmraj" uniqKey="Kotekar Patil D" first="Dharmraj" last="Kotekar-Patil">Dharmraj Kotekar-Patil</name></noRegion><name sortKey="Kern, Dieter P" sort="Kern, Dieter P" uniqKey="Kern D" first="Dieter P" last="Kern">Dieter P. Kern</name><name sortKey="Ruoff, Matthias" sort="Ruoff, Matthias" uniqKey="Ruoff M" first="Matthias" last="Ruoff">Matthias Ruoff</name><name sortKey="Wharam, David A" sort="Wharam, David A" uniqKey="Wharam D" first="David A" last="Wharam">David A. Wharam</name></country><country name="Pays-Bas"><noRegion><name sortKey="Verduijn, Jan" sort="Verduijn, Jan" uniqKey="Verduijn J" first="Jan" last="Verduijn">Jan Verduijn</name></noRegion><name sortKey="Rogge, Sven" sort="Rogge, Sven" uniqKey="Rogge S" first="Sven" last="Rogge">Sven Rogge</name><name sortKey="Tettamanzi, Giuseppe C" sort="Tettamanzi, Giuseppe C" uniqKey="Tettamanzi G" first="Giuseppe C" last="Tettamanzi">Giuseppe C. Tettamanzi</name></country><country name="Australie"><noRegion><name sortKey="Verduijn, Jan" sort="Verduijn, Jan" uniqKey="Verduijn J" first="Jan" last="Verduijn">Jan Verduijn</name></noRegion><name sortKey="Rogge, Sven" sort="Rogge, Sven" uniqKey="Rogge S" first="Sven" last="Rogge">Sven Rogge</name><name sortKey="Tettamanzi, Giuseppe C" sort="Tettamanzi, Giuseppe C" uniqKey="Tettamanzi G" first="Giuseppe C" last="Tettamanzi">Giuseppe C. Tettamanzi</name></country><country name="France"><region name="Auvergne-Rhône-Alpes"><name sortKey="Roche, Benoit" sort="Roche, Benoit" uniqKey="Roche B" first="Benoit" last="Roche">Benoit Roche</name></region><name sortKey="Jehl, Xavier" sort="Jehl, Xavier" uniqKey="Jehl X" first="Xavier" last="Jehl">Xavier Jehl</name><name sortKey="Sanquer, Marc" sort="Sanquer, Marc" uniqKey="Sanquer M" first="Marc" last="Sanquer">Marc Sanquer</name><name sortKey="Sanquer, Marc" sort="Sanquer, Marc" uniqKey="Sanquer M" first="Marc" last="Sanquer">Marc Sanquer</name><name sortKey="Vinet, Maud" sort="Vinet, Maud" uniqKey="Vinet M" first="Maud" last="Vinet">Maud Vinet</name><name sortKey="Wacquez, Romain" sort="Wacquez, Romain" uniqKey="Wacquez R" first="Romain" last="Wacquez">Romain Wacquez</name><name sortKey="Wacquez, Romain" sort="Wacquez, Romain" uniqKey="Wacquez R" first="Romain" last="Wacquez">Romain Wacquez</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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