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Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses

Identifieur interne : 000362 ( Istex/Corpus ); précédent : 000361; suivant : 000363

Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses

Auteurs : F. Hamadache ; C. Renaux ; J. Duvail ; P. Bertrand

Source :

RBID : ISTEX:2677C4E48F855DA3DE61636FE76986250490F476

English descriptors

Abstract

Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p‐type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as‐prepared PS is practically oxide‐free and H‐terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.

Url:
DOI: 10.1002/pssa.200306494

Links to Exploration step

ISTEX:2677C4E48F855DA3DE61636FE76986250490F476

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<p>Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p‐type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as‐prepared PS is practically oxide‐free and H‐terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.</p>
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<title>Interface investigations of iron and cobalt metallized porous silicon</title>
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<title>Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses</title>
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<namePart type="family">Hamadache</namePart>
<affiliation>Département des Matériaux et Composants, Université des Sciences et de la Technologie “Houari Boumédiene”, B.P. 32 El‐Alia, 16111 Bab‐Ezzouar Alger, Algeria</affiliation>
<affiliation>E-mail: hamadache@pcpm.ucl.ac.be</affiliation>
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<namePart type="family">Renaux</namePart>
<affiliation>Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain‐la‐Neuve, Belgium</affiliation>
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<namePart type="given">J.‐L.</namePart>
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<affiliation>Laboratoire de Physique Cristalline, Institut des Matériaux de Nantes, 2, Rue de la Houssinière, 44322 Nantes cedex 03, France</affiliation>
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<affiliation>Unité de Physico‐Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, 1348 Louvain‐la‐Neuve, Belgium</affiliation>
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<abstract lang="en">Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p‐type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as‐prepared PS is practically oxide‐free and H‐terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.</abstract>
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<topic>61.43.Gt</topic>
<topic>68.35.Ct</topic>
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<topic>78.30.Am</topic>
<topic>79.20.Fv</topic>
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<title>physica status solidi (a)</title>
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<title>phys. stat. sol. (a)</title>
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<topic>Original Paper</topic>
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<identifier type="ISSN">0031-8965</identifier>
<identifier type="eISSN">1521-396X</identifier>
<identifier type="DOI">10.1002/(ISSN)1521-396X</identifier>
<identifier type="PublisherID">PSSA</identifier>
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<date>2003</date>
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<caption>vol.</caption>
<number>197</number>
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<identifier type="DOI">10.1002/pssa.200306494</identifier>
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<accessCondition type="use and reproduction" contentType="copyright">© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</accessCondition>
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