Nonlinear response and chaos in semiconductors induced by impact ionization
Identifieur interne : 000596 ( Istex/Corpus ); précédent : 000595; suivant : 000597Nonlinear response and chaos in semiconductors induced by impact ionization
Auteurs : K. Aoki ; K. YamamotoSource :
- Applied Physics A [ 0947-8396 ] ; 1989-02-01.
Abstract
Abstract: A review is given of the nonlinear response and chaos induced by impact ionization of neutral shallow donors, observed in n-GaAs. Two kinds of the observation are described; (i) firing wave instability, and (ii) periodically driven current filament. For the firing wave instability, several important aspects are discussed including the selective excitation of the current filaments and the deterministic nature of the firing density wave. The nonlinear response of a periodically driven current filament has been investigated by applying a dc+ac bias of the form ofV dc+V ac sin(2πf 0 t), wheref 0∼1 MHz. The carrier dynamics and the bifurcation routes to chaos are discussed in terms of the observed phase diagram and the bifurcation map. The deterministic nature of the strange attractors are described in detail in terms of the correlation dimension and the Kolmogorov entropy.
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DOI: 10.1007/BF01141273
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Aoki</name><affiliation><mods:affiliation>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</mods:affiliation></affiliation></author><author><name sortKey="Yamamoto, K" sort="Yamamoto, K" uniqKey="Yamamoto K" first="K." last="Yamamoto">K. Yamamoto</name><affiliation><mods:affiliation>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Applied Physics A</title><title level="j" type="sub">Materials Science and Processing</title><title level="j" type="abbrev">Appl. Phys. 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Two kinds of the observation are described; (i) firing wave instability, and (ii) periodically driven current filament. For the firing wave instability, several important aspects are discussed including the selective excitation of the current filaments and the deterministic nature of the firing density wave. The nonlinear response of a periodically driven current filament has been investigated by applying a dc+ac bias of the form ofV dc+V ac sin(2πf 0 t), wheref 0∼1 MHz. The carrier dynamics and the bifurcation routes to chaos are discussed in terms of the observed phase diagram and the bifurcation map. The deterministic nature of the strange attractors are described in detail in terms of the correlation dimension and the Kolmogorov entropy.</div></front></TEI><istex><corpusName>springer</corpusName><author><json:item><name>K. Aoki</name><affiliations><json:string>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</json:string></affiliations></json:item><json:item><name>K. Yamamoto</name><affiliations><json:string>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</json:string></affiliations></json:item></author><articleId><json:string>BF01141273</json:string><json:string>Art4</json:string></articleId><language><json:string>eng</json:string></language><abstract>Abstract: A review is given of the nonlinear response and chaos induced by impact ionization of neutral shallow donors, observed in n-GaAs. Two kinds of the observation are described; (i) firing wave instability, and (ii) periodically driven current filament. For the firing wave instability, several important aspects are discussed including the selective excitation of the current filaments and the deterministic nature of the firing density wave. The nonlinear response of a periodically driven current filament has been investigated by applying a dc+ac bias of the form ofV dc+V ac sin(2πf 0 t), wheref 0∼1 MHz. The carrier dynamics and the bifurcation routes to chaos are discussed in terms of the observed phase diagram and the bifurcation map. 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Two kinds of the observation are described; (i) firing wave instability, and (ii) periodically driven current filament. For the firing wave instability, several important aspects are discussed including the selective excitation of the current filaments and the deterministic nature of the firing density wave. The nonlinear response of a periodically driven current filament has been investigated by applying a dc+ac bias of the form ofV dc+V ac sin(2πf 0 t), wheref 0∼1 MHz. The carrier dynamics and the bifurcation routes to chaos are discussed in terms of the observed phase diagram and the bifurcation map. The deterministic nature of the strange attractors are described in detail in terms of the correlation dimension and the Kolmogorov entropy.</p></abstract><textClass><keywords scheme="Journal Subject"><list><head>Physics</head><item><term>Optical and Electronic Materials</term></item><item><term>Nanotechnology</term></item><item><term>Characterization and Evaluation Materials</term></item><item><term>Surfaces and Interfaces, Thin Films</term></item><item><term>Condensed Matter</term></item><item><term>Operating Procedures, Materials Treatment</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="1988-05-20">Created</change><change when="1989-02-01">Published</change><change xml:id="refBibs-istex" who="#ISTEX-API" when="2016-3-19">References added</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><original>false</original><mimetype>text/plain</mimetype><extension>txt</extension><uri>https://api.istex.fr/document/574610778B61A0258155D9E687537ABE7DC5984C/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Springer, Publisher found" wicri:toSee="no header"><istex:xmlDeclaration>version="1.0" encoding="UTF-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//Springer-Verlag//DTD A++ V2.4//EN" URI="http://devel.springer.de/A++/V2.4/DTD/A++V2.4.dtd" name="istex:docType"></istex:docType><istex:document><Publisher><PublisherInfo><PublisherName>Springer-Verlag</PublisherName><PublisherLocation>Berlin/Heidelberg</PublisherLocation></PublisherInfo><Journal><JournalInfo JournalProductType="ArchiveJournal" NumberingStyle="Unnumbered"><JournalID>339</JournalID><JournalPrintISSN>0947-8396</JournalPrintISSN><JournalElectronicISSN>1432-0630</JournalElectronicISSN><JournalTitle>Applied Physics A</JournalTitle><JournalSubTitle>Materials Science and Processing</JournalSubTitle><JournalAbbreviatedTitle>Appl. 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Two kinds of the observation are described; (i) firing wave instability, and (ii) periodically driven current filament. For the firing wave instability, several important aspects are discussed including the selective excitation of the current filaments and the deterministic nature of the firing density wave. The nonlinear response of a periodically driven current filament has been investigated by applying a dc+ac bias of the form of<Emphasis Type="Italic">V</Emphasis><Subscript>dc</Subscript>+<Emphasis Type="Italic">V</Emphasis><Subscript>ac</Subscript><Emphasis Type="Italic">sin(2πf</Emphasis><Subscript>0</Subscript><Emphasis Type="Italic">t</Emphasis>), where<Emphasis Type="Italic">f</Emphasis><Subscript>0</Subscript>∼1 MHz. The carrier dynamics and the bifurcation routes to chaos are discussed in terms of the observed phase diagram and the bifurcation map. The deterministic nature of the strange attractors are described in detail in terms of the correlation dimension and the Kolmogorov entropy.</Para></Abstract><KeywordGroup Language="En"><Heading>PACS</Heading><Keyword>72.20Ht</Keyword><Keyword>72.20JV</Keyword><Keyword>05.45+b</Keyword></KeywordGroup></ArticleHeader><NoBody></NoBody></Article></Issue></Volume></Journal></Publisher></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Nonlinear response and chaos in semiconductors induced by impact ionization</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>Nonlinear response and chaos in semiconductors induced by impact ionization</title></titleInfo><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Aoki</namePart><affiliation>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Yamamoto</namePart><affiliation>Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, 657, Kobe, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="OriginalPaper"></genre><originInfo><publisher>Springer-Verlag</publisher><place><placeTerm type="text">Berlin/Heidelberg</placeTerm></place><dateCreated encoding="w3cdtf">1988-05-20</dateCreated><dateIssued encoding="w3cdtf">1989-02-01</dateIssued><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="en">Abstract: A review is given of the nonlinear response and chaos induced by impact ionization of neutral shallow donors, observed in n-GaAs. 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