High-power operation of silica-based Raman fiber amplifier at 2147 nm.
Identifieur interne : 000126 ( PubMed/Corpus ); précédent : 000125; suivant : 000127High-power operation of silica-based Raman fiber amplifier at 2147 nm.
Auteurs : Jiang Liu ; Fangzhou Tan ; Hongxing Shi ; Pu WangSource :
- Optics express [ 1094-4087 ] ; 2014.
English descriptors
- KwdEn :
- MESH :
- chemical : Silicon Dioxide.
- instrumentation : Fiber Optic Technology.
- Amplifiers, Electronic, Computer-Aided Design, Equipment Design, Lasers, Solid-State.
Abstract
We demonstrated a 2147 nm silica-based Raman fiber amplifier with output power of 14.3 W directly pumped with a 1963 nm CW thulium-doped all-fiber MOPA. The 1963 nm thulium-doped all-fiber MOPA is seeded with a 2147 nm thulium-doped all-fiber laser at the same time. The Raman Stokes power shift from 1963 nm to 2147 nm is accomplished in a piece of 50 m silica-based highly nonlinear fiber (HNLF). The conversion efficiency was 38.5% from 1963 nm to 2147 nm in the HNLF. The output power achieved was only currently limited by available 1963 nm input power and the architecture has significant scaling potential. To the best of our knowledge, this is the highest power operation of a Raman fiber amplifier at >2 µm wavelength region.
PubMed: 25402080
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pubmed:25402080Le document en format XML
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The 1963 nm thulium-doped all-fiber MOPA is seeded with a 2147 nm thulium-doped all-fiber laser at the same time. The Raman Stokes power shift from 1963 nm to 2147 nm is accomplished in a piece of 50 m silica-based highly nonlinear fiber (HNLF). The conversion efficiency was 38.5% from 1963 nm to 2147 nm in the HNLF. The output power achieved was only currently limited by available 1963 nm input power and the architecture has significant scaling potential. To the best of our knowledge, this is the highest power operation of a Raman fiber amplifier at >2 µm wavelength region.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">25402080</PMID><DateCreated><Year>2014</Year><Month>11</Month><Day>18</Day></DateCreated><DateCompleted><Year>2015</Year><Month>11</Month><Day>03</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>22</Volume><Issue>23</Issue><PubDate><Year>2014</Year><Month>Nov</Month><Day>17</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>High-power operation of silica-based Raman fiber amplifier at 2147 nm.</ArticleTitle><Pagination><MedlinePgn>28383-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.22.028383</ELocationID><Abstract><AbstractText>We demonstrated a 2147 nm silica-based Raman fiber amplifier with output power of 14.3 W directly pumped with a 1963 nm CW thulium-doped all-fiber MOPA. The 1963 nm thulium-doped all-fiber MOPA is seeded with a 2147 nm thulium-doped all-fiber laser at the same time. The Raman Stokes power shift from 1963 nm to 2147 nm is accomplished in a piece of 50 m silica-based highly nonlinear fiber (HNLF). The conversion efficiency was 38.5% from 1963 nm to 2147 nm in the HNLF. The output power achieved was only currently limited by available 1963 nm input power and the architecture has significant scaling potential. To the best of our knowledge, this is the highest power operation of a Raman fiber amplifier at >2 µm wavelength region.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Liu</LastName><ForeName>Jiang</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Tan</LastName><ForeName>Fangzhou</ForeName><Initials>F</Initials></Author><Author ValidYN="Y"><LastName>Shi</LastName><ForeName>Hongxing</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Pu</ForeName><Initials>P</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType><PublicationType UI="D013485">Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>7631-86-9</RegistryNumber><NameOfSubstance UI="D012822">Silicon Dioxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="Y" UI="D000669">Amplifiers, Electronic</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y" UI="D017076">Computer-Aided Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N" UI="D004867">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N" UI="D005336">Fiber Optic Technology</DescriptorName><QualifierName MajorTopicYN="Y" UI="Q000295">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y" UI="D053844">Lasers, Solid-State</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y" UI="D012822">Silicon Dioxide</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>11</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>11</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2015</Year><Month>11</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">303787</ArticleId><ArticleId IdType="pubmed">25402080</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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