Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers
Identifieur interne : 000068 ( Pmc/Checkpoint ); précédent : 000067; suivant : 000069Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers
Auteurs : Kaung-Jay Peng [République populaire de Chine] ; Yung-Hsiang Lin [République populaire de Chine] ; Chung-Lun Wu [République populaire de Chine] ; Sheng-Fong Lin [République populaire de Chine] ; Chun-Yu Yang [République populaire de Chine] ; Shih-Meng Lin [République populaire de Chine] ; Din-Ping Tsai [République populaire de Chine] ; Gong-Ru Lin [République populaire de Chine]Source :
- Scientific Reports [ 2045-2322 ] ; 2015.
Abstract
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Url:
DOI: 10.1038/srep13689
PubMed: 26328535
PubMed Central: 4556966
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers</title><author><name sortKey="Peng, Kaung Jay" sort="Peng, Kaung Jay" uniqKey="Peng K" first="Kaung-Jay" last="Peng">Kaung-Jay Peng</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Yung Hsiang" sort="Lin, Yung Hsiang" uniqKey="Lin Y" first="Yung-Hsiang" last="Lin">Yung-Hsiang Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Wu, Chung Lun" sort="Wu, Chung Lun" uniqKey="Wu C" first="Chung-Lun" last="Wu">Chung-Lun Wu</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Sheng Fong" sort="Lin, Sheng Fong" uniqKey="Lin S" first="Sheng-Fong" last="Lin">Sheng-Fong Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Yang, Chun Yu" sort="Yang, Chun Yu" uniqKey="Yang C" first="Chun-Yu" last="Yang">Chun-Yu Yang</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Shih Meng" sort="Lin, Shih Meng" uniqKey="Lin S" first="Shih-Meng" last="Lin">Shih-Meng Lin</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>Department of Physics, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Tsai, Din Ping" sort="Tsai, Din Ping" uniqKey="Tsai D" first="Din-Ping" last="Tsai">Din-Ping Tsai</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>Department of Physics, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Gong Ru" sort="Lin, Gong Ru" uniqKey="Lin G" first="Gong-Ru" last="Lin">Gong-Ru Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">PMC</idno><idno type="pmid">26328535</idno><idno type="pmc">4556966</idno><idno type="url">http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4556966</idno><idno type="RBID">PMC:4556966</idno><idno type="doi">10.1038/srep13689</idno><date when="2015">2015</date><idno type="wicri:Area/Pmc/Corpus">000092</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Corpus" wicri:corpus="PMC">000092</idno><idno type="wicri:Area/Pmc/Curation">000092</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Curation">000092</idno><idno type="wicri:Area/Pmc/Checkpoint">000068</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Checkpoint">000068</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a" type="main">Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers</title><author><name sortKey="Peng, Kaung Jay" sort="Peng, Kaung Jay" uniqKey="Peng K" first="Kaung-Jay" last="Peng">Kaung-Jay Peng</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Yung Hsiang" sort="Lin, Yung Hsiang" uniqKey="Lin Y" first="Yung-Hsiang" last="Lin">Yung-Hsiang Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Wu, Chung Lun" sort="Wu, Chung Lun" uniqKey="Wu C" first="Chung-Lun" last="Wu">Chung-Lun Wu</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Sheng Fong" sort="Lin, Sheng Fong" uniqKey="Lin S" first="Sheng-Fong" last="Lin">Sheng-Fong Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Yang, Chun Yu" sort="Yang, Chun Yu" uniqKey="Yang C" first="Chun-Yu" last="Yang">Chun-Yu Yang</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Shih Meng" sort="Lin, Shih Meng" uniqKey="Lin S" first="Shih-Meng" last="Lin">Shih-Meng Lin</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>Department of Physics, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Tsai, Din Ping" sort="Tsai, Din Ping" uniqKey="Tsai D" first="Din-Ping" last="Tsai">Din-Ping Tsai</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>Department of Physics, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Gong Ru" sort="Lin, Gong Ru" uniqKey="Lin G" first="Gong-Ru" last="Lin">Gong-Ru Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author></analytic><series><title level="j">Scientific Reports</title><idno type="eISSN">2045-2322</idno><imprint><date when="2015">2015</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en"><p>The <italic>in-situ</italic> dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.</p></div></front><back><div1 type="bibliography"><listBibl><biblStruct><analytic><author><name sortKey="Keller, U" uniqKey="Keller U">U. 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<front><journal-meta><journal-id journal-id-type="nlm-ta">Sci Rep</journal-id><journal-id journal-id-type="iso-abbrev">Sci Rep</journal-id><journal-title-group><journal-title>Scientific Reports</journal-title></journal-title-group><issn pub-type="epub">2045-2322</issn><publisher><publisher-name>Nature Publishing Group</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="pmid">26328535</article-id><article-id pub-id-type="pmc">4556966</article-id><article-id pub-id-type="pii">srep13689</article-id><article-id pub-id-type="doi">10.1038/srep13689</article-id><article-categories><subj-group subj-group-type="heading"><subject>Article</subject></subj-group></article-categories><title-group><article-title>Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers</article-title></title-group><contrib-group><contrib contrib-type="author"><name><surname>Peng</surname><given-names>Kaung-Jay</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Lin</surname><given-names>Yung-Hsiang</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Wu</surname><given-names>Chung-Lun</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Lin</surname><given-names>Sheng-Fong</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Yang</surname><given-names>Chun-Yu</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Lin</surname><given-names>Shih-Meng</given-names></name><xref ref-type="aff" rid="a2">2</xref></contrib><contrib contrib-type="author"><name><surname>Tsai</surname><given-names>Din-Ping</given-names></name><xref ref-type="aff" rid="a2">2</xref></contrib><contrib contrib-type="author"><name><surname>Lin</surname><given-names>Gong-Ru</given-names></name><xref ref-type="corresp" rid="c1">a</xref><xref ref-type="aff" rid="a1">1</xref></contrib><aff id="a1"><label>1</label><institution>Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></aff><aff id="a2"><label>2</label><institution>Department of Physics, National Taiwan University (NTU)</institution>, No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,<country>Republic of China</country></aff></contrib-group><author-notes><corresp id="c1"><label>a</label><email>grlin@ntu.edu.tw</email></corresp></author-notes><pub-date pub-type="epub"><day>02</day><month>09</month><year>2015</year></pub-date><pub-date pub-type="collection"><year>2015</year></pub-date><volume>5</volume><elocation-id>13689</elocation-id><history><date date-type="received"><day>24</day><month>04</month><year>2015</year></date><date date-type="accepted"><day>03</day><month>08</month><year>2015</year></date></history><permissions><copyright-statement>Copyright © 2015, Macmillan Publishers Limited</copyright-statement><copyright-year>2015</copyright-year><copyright-holder>Macmillan Publishers Limited</copyright-holder><license license-type="open-access" xlink:href="http://creativecommons.org/licenses/by/4.0/"><pmc-comment>author-paid</pmc-comment>
<license-p>This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit <ext-link ext-link-type="uri" xlink:href="http://creativecommons.org/licenses/by/4.0/">http://creativecommons.org/licenses/by/4.0/</ext-link></license-p></license></permissions><abstract><p>The <italic>in-situ</italic> dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.</p></abstract></article-meta></front><floats-group><fig id="f1"><label>Figure 1</label><caption><title>Structural and optical properties of few-layer graphene grown under hydrogen-free and low-temperature PECVD.</title><p>(<bold>a</bold>) The AFM image and (<bold>b</bold>) the cross-sectional profile scanned from point A of the synthesized few-layer graphene. (<bold>c</bold>) The non-linear transmittance of the synthesized graphene. (<bold>d</bold>) The Raman spectra of commercial single-layer graphene and hydrogen-free synthesized few-layer graphene.</p></caption><graphic xlink:href="srep13689-f1"></graphic></fig><fig id="f2"><label>Figure 2</label><caption><title>Passively mode-locked EDFL performances by transmission-type graphene saturable absorber.</title><p>(<bold>a</bold>) The photograph of patchcord end-face with and without hydrogen-free and low temperature synthesized graphene on the surface. (<bold>b</bold>) The oscilloscope trace of passively mode-locked EDFL. (<bold>c</bold>) and (<bold>d</bold>) The optical spectra and autocorrelation traces of transmission-type passively mode-locked EDFL system under different pumping current. (<bold>e</bold>) The varied pulsewidth and FWHM of transmission-type passively mode-locked EDFL system under different pumping current. (<bold>f</bold>) The time-bandwidth products of the transmission-type passively mode-locked EDFL system under different pumping current.</p></caption><graphic xlink:href="srep13689-f2"></graphic></fig><fig id="f3"><label>Figure 3</label><caption><title>Passively mode-locked EDFL performances by reflection-type graphene saturable absorber.</title><p>(<bold>a</bold>) The photograph of gold-coated patchcord end-face with and without hydrogen-free and low temperature synthesized graphene on the surface. The inset: AFM image of gold film. (<bold>b</bold>) The oscilloscope trace of passively mode-locked EDFL. (<bold>c</bold>) and (<bold>d</bold>) The optical spectra and autocorrelation traces of reflection-type passively mode-locked EDFL system under different pumping current. (<bold>e</bold>) The varied pulsewidth and FWHM of reflection-type passively mode-locked EDFL system under different pumping current. (<bold>f</bold>) The time-bandwidth products of reflection-type passively mode-locked EDFL system under different pumping current.</p></caption><graphic xlink:href="srep13689-f3"></graphic></fig><fig id="f4"><label>Figure 4</label><caption><title>Graphene precipitation from Ni substrate and graphene adhesion on the SMF patchcord.</title><p>(<bold>a</bold>) The process of graphene precipitation from Ni substrate. (<bold>b</bold>) The transfer process of graphene from Ni substrate to the SMF patchcord.</p></caption><graphic xlink:href="srep13689-f4"></graphic></fig><fig id="f5"><label>Figure 5</label><caption><title>The schematic diagram of transmission-type passively mode locked EDFL.</title><p>The passively mode-locked EDFL system with the graphene saturable absorber attached on the end-face of SMF patchcord.</p></caption><graphic xlink:href="srep13689-f5"></graphic></fig><fig id="f6"><label>Figure 6</label><caption><title>The schematic diagram of reflection-type passively mode locked EDFL.</title><p>The passively mode-locked EDFL system with the reflection-type graphene saturable absorber attached on the gold film.</p></caption><graphic xlink:href="srep13689-f6"></graphic></fig><fig id="f7"><label>Figure 7</label><caption><title>Passively mode-locked EDFL performances.</title><p>(<bold>a</bold>) The Gain and output power (in dBm) of EDFA versus input power. (<bold>b</bold>) The curves of P<sub>out</sub> (in mW) vs. pumping currents of the transmission-type and reflection-type graphene saturable absorber mode-locked EDFL systems.</p></caption><graphic xlink:href="srep13689-f7"></graphic></fig></floats-group></pmc><affiliations><list><country><li>République populaire de Chine</li></country></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Peng, Kaung Jay" sort="Peng, Kaung Jay" uniqKey="Peng K" first="Kaung-Jay" last="Peng">Kaung-Jay Peng</name></noRegion><name sortKey="Lin, Gong Ru" sort="Lin, Gong Ru" uniqKey="Lin G" first="Gong-Ru" last="Lin">Gong-Ru Lin</name><name sortKey="Lin, Sheng Fong" sort="Lin, Sheng Fong" uniqKey="Lin S" first="Sheng-Fong" last="Lin">Sheng-Fong Lin</name><name sortKey="Lin, Shih Meng" sort="Lin, Shih Meng" uniqKey="Lin S" first="Shih-Meng" last="Lin">Shih-Meng Lin</name><name sortKey="Lin, Yung Hsiang" sort="Lin, Yung Hsiang" uniqKey="Lin Y" first="Yung-Hsiang" last="Lin">Yung-Hsiang Lin</name><name sortKey="Tsai, Din Ping" sort="Tsai, Din Ping" uniqKey="Tsai D" first="Din-Ping" last="Tsai">Din-Ping Tsai</name><name sortKey="Wu, Chung Lun" sort="Wu, Chung Lun" uniqKey="Wu C" first="Chung-Lun" last="Wu">Chung-Lun Wu</name><name sortKey="Yang, Chun Yu" sort="Yang, Chun Yu" uniqKey="Yang C" first="Chun-Yu" last="Yang">Chun-Yu Yang</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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