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Magnetic properties of Tm-Zr multilayers

Identifieur interne : 001179 ( Pascal/Curation ); précédent : 001178; suivant : 001180

Magnetic properties of Tm-Zr multilayers

Auteurs : A. Baudry [France] ; P. Boyer [France] ; M. Brunel [France]

Source :

RBID : Pascal:98-0297284

Descripteurs français

English descriptors

Abstract

A 600 Å film of thulium and Tm-Zr multilayers in which the Tm layers are separated by 30 Å non-magnetic Zr layers were evaporated on superficially oxidized silicon substrates under ultra-vacuum conditions. The thickness of the Tm layers was varied between 8 and 30 Å, X-ray diffraction gives evidence for a columnar growth along the c axis of the HCP structure. with in-plane compression of Tm layers thinner than 20 Å. The magnetic structure of the film is quite similar to that of bulk Tm. On the contrary. the c-axis modulated antiferromagnetic phase which takes place in the film at TN 54 K is not observed in the multilayers. This phenomenon is preferentially attributed to an enhancement of the ferromagnetic coupling at the edges of the thulium layers. which favours a structure close to the squared 3-4 antiphase ferromagnetic arrangement of the magnetic moments displayed by the bulk below 30 K. A marked trend to ferromagnetism is observed as the Tm layers become thinner. Contrary to that observed in Dy-Zr and Ho-Zr multilayers, the interface and volume anisotropies do not compensate each other for 8 Å Tm layers. The c-axis magnetic anisotropy of Tm is preserved whatever the thickness of the Tm layers. The estimated anisotropies are compared with the results of point-charge crystal-field calculations.
pA  
A01 01  1    @0 0304-8853
A02 01      @0 JMMMDC
A03   1    @0 J. magn. magn. mater.
A05       @2 185
A06       @2 3
A08 01  1  ENG  @1 Magnetic properties of Tm-Zr multilayers
A11 01  1    @1 BAUDRY (A.)
A11 02  1    @1 BOYER (P.)
A11 03  1    @1 BRUNEL (M.)
A14 01      @1 Département de Recherche Fondamentale sur la Matière Condensée, CEA Grenoble, 17 rue des Martyrs @2 38054 Grenoble @3 FRA @Z 1 aut. @Z 2 aut.
A14 02      @1 Laboratoire de Cristallogaphie, CNRS, BP 166 @2 38042 Genoble @3 FRA @Z 3 aut.
A20       @1 309-321
A21       @1 1998
A23 01      @0 ENG
A43 01      @1 INIST @2 17230 @5 354000076776450060
A44       @0 0000 @1 © 1998 INIST-CNRS. All rights reserved.
A45       @0 28 ref.
A47 01  1    @0 98-0297284
A60       @1 P
A61       @0 A
A64   1    @0 Journal of magnetism and magnetic materials
A66 01      @0 NLD
C01 01    ENG  @0 A 600 Å film of thulium and Tm-Zr multilayers in which the Tm layers are separated by 30 Å non-magnetic Zr layers were evaporated on superficially oxidized silicon substrates under ultra-vacuum conditions. The thickness of the Tm layers was varied between 8 and 30 Å, X-ray diffraction gives evidence for a columnar growth along the c axis of the HCP structure. with in-plane compression of Tm layers thinner than 20 Å. The magnetic structure of the film is quite similar to that of bulk Tm. On the contrary. the c-axis modulated antiferromagnetic phase which takes place in the film at TN 54 K is not observed in the multilayers. This phenomenon is preferentially attributed to an enhancement of the ferromagnetic coupling at the edges of the thulium layers. which favours a structure close to the squared 3-4 antiphase ferromagnetic arrangement of the magnetic moments displayed by the bulk below 30 K. A marked trend to ferromagnetism is observed as the Tm layers become thinner. Contrary to that observed in Dy-Zr and Ho-Zr multilayers, the interface and volume anisotropies do not compensate each other for 8 Å Tm layers. The c-axis magnetic anisotropy of Tm is preserved whatever the thickness of the Tm layers. The estimated anisotropies are compared with the results of point-charge crystal-field calculations.
C02 01  3    @0 001B70E70C
C02 02  X    @0 240
C03 01  3  FRE  @0 Etude expérimentale @5 01
C03 01  3  ENG  @0 Experimental study @5 01
C03 02  3  FRE  @0 Multicouche @5 02
C03 02  3  ENG  @0 Multilayers @5 02
C03 03  3  FRE  @0 Structure magnétique @5 03
C03 03  3  ENG  @0 Magnetic structure @5 03
C03 04  3  FRE  @0 Anisotropie magnétique @5 04
C03 04  3  ENG  @0 Magnetic anisotropy @5 04
C03 05  3  FRE  @0 Aimantation @5 05
C03 05  3  ENG  @0 Magnetization @5 05
C03 06  3  FRE  @0 Hystérésis @5 06
C03 06  3  ENG  @0 Hysteresis @5 06
C03 07  3  FRE  @0 Thulium @2 NC @5 09
C03 07  3  ENG  @0 Thulium @2 NC @5 09
C03 08  3  FRE  @0 Zirconium @2 NC @5 10
C03 08  3  ENG  @0 Zirconium @2 NC @5 10
C03 09  3  FRE  @0 7570C @2 PAC @4 INC @5 56
C03 10  3  FRE  @0 Tm @4 INC @5 92
C03 11  3  FRE  @0 Zr @4 INC @5 93
C07 01  3  FRE  @0 Métal transition @5 16
C07 01  3  ENG  @0 Transition elements @5 16
C07 02  3  FRE  @0 Lanthanide @2 NC @5 17
C07 02  3  ENG  @0 Rare earths @2 NC @5 17
N21       @1 201

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Pascal:98-0297284

Le document en format XML

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<div type="abstract" xml:lang="en">A 600 Å film of thulium and Tm-Zr multilayers in which the Tm layers are separated by 30 Å non-magnetic Zr layers were evaporated on superficially oxidized silicon substrates under ultra-vacuum conditions. The thickness of the Tm layers was varied between 8 and 30 Å, X-ray diffraction gives evidence for a columnar growth along the c axis of the HCP structure. with in-plane compression of Tm layers thinner than 20 Å. The magnetic structure of the film is quite similar to that of bulk Tm. On the contrary. the c-axis modulated antiferromagnetic phase which takes place in the film at T
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<sub>N</sub>
54 K is not observed in the multilayers. This phenomenon is preferentially attributed to an enhancement of the ferromagnetic coupling at the edges of the thulium layers. which favours a structure close to the squared 3-4 antiphase ferromagnetic arrangement of the magnetic moments displayed by the bulk below 30 K. A marked trend to ferromagnetism is observed as the Tm layers become thinner. Contrary to that observed in Dy-Zr and Ho-Zr multilayers, the interface and volume anisotropies do not compensate each other for 8 Å Tm layers. The c-axis magnetic anisotropy of Tm is preserved whatever the thickness of the Tm layers. The estimated anisotropies are compared with the results of point-charge crystal-field calculations.</s0>
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<s5>06</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>56</s5>
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<s4>INC</s4>
<s5>92</s5>
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<s4>INC</s4>
<s5>93</s5>
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<s0>Métal transition</s0>
<s5>16</s5>
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