ThuliumV1, Pascal, Curation, bibRecord, 000E97

p-Type II-VI compounds doped by rare-earth elements

Identifieur interne : 000E97 ( Pascal/Curation ); précédent : 000E96; suivant : 000E98

p-Type II-VI compounds doped by rare-earth elements

Auteurs : A. N. Georgobiani [Russie] ; M. B. Kotljarevsky [Ukraine] ; V. V. Kidalov [Ukraine] ; I. V. Rogozin [Ukraine] ; U. A. Aminov [Russie]

Source :

Journal of crystal growth [ 0022-0248 ] ; 2000.

RBID : Pascal:01-0024682

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Semiconducteur II-VI, Matériau dopé, Photoluminescence, Addition thulium, Zinc séléniure, Zinc sulfure, Composé binaire, Addition erbium, 7855E, 6172V, ZnS:Tm, ZnSe:Er, Se Zn.

English descriptors

KwdEn :
- Binary compounds, Doped materials, Erbium additions, Experimental study, II-VI semiconductors, Photoluminescence, Thulium additions, Zinc selenides, Zinc sulfides.

Abstract

The luminescence of Tm³⁺ in p-type ZnS and of Er³⁺ in p-type ZnSe crystals have been investigated. The doping with rare-earth elements (REE) was performed by means of ion implantation in n-type materials. The post-implantation annealing of the radiation damages was performed in the atomic flux of VI group elements. The interaction of such a flux with the treated crystal leads also to the inversion of the conductivity of these semiconductors to p-type. It was found that in both cases REE occupy zinc sites. The interpretation of the corresponding luminescence lines has been given.

A01	`01`	`1`		`@0 0022-0248`
A02	`01`			`@0 JCRGAE`
A03		`1`		`@0 J. cryst. growth`
A05				`@2 214-15`
A08	`01`	`1`	`ENG`	`@1 p-Type II-VI compounds doped by rare-earth elements`
A09	`01`	`1`	`ENG`	`@1 Proceedings of the 9th international conference on II-VI compounds, Kyoto, Japan, 1-5 November 1999`
A11	`01`	`1`		`@1 GEORGOBIANI (A. N.)`
A11	`02`	`1`		`@1 KOTLJAREVSKY (M. B.)`
A11	`03`	`1`		`@1 KIDALOV (V. V.)`
A11	`04`	`1`		`@1 ROGOZIN (I. V.)`
A11	`05`	`1`		`@1 AMINOV (U. A.)`
A12	`01`	`1`		`@1 SUEMUNE (Ikuo) @9 ed.`
A12	`02`	`1`		`@1 ISHIBASHI (Akira) @9 ed.`
A14	`01`			`@1 P.N. Lebedev Physical Institute, Leninsky prospect 53 @2 Moscow 117924 @3 RUS @Z 1 aut. @Z 5 aut.`
A14	`02`			`@1 Berdyansk Pedagogical Institute, Shmidt prospect 4 @2 Berdyansk 332440 @3 UKR @Z 2 aut. @Z 3 aut. @Z 4 aut.`
A15	`01`			`@1 Hokkaido University @2 Sapporo @3 JPN @Z 1 aut.`
A15	`02`			`@1 Sony Corp. @2 Yokohama @3 JPN @Z 2 aut.`
A20				`@1 516-519`
A21				`@1 2000`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 13507 @5 354000089013091080`
A44				`@0 0000 @1 © 2001 INIST-CNRS. All rights reserved.`
A45				`@0 9 ref.`
A47	`01`	`1`		`@0 01-0024682`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of crystal growth`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	@0 The luminescence of Tm³⁺ in p-type ZnS and of Er³⁺ in p-type ZnSe crystals have been investigated. The doping with rare-earth elements (REE) was performed by means of ion implantation in n-type materials. The post-implantation annealing of the radiation damages was performed in the atomic flux of VI group elements. The interaction of such a flux with the treated crystal leads also to the inversion of the conductivity of these semiconductors to p-type. It was found that in both cases REE occupy zinc sites. The interpretation of the corresponding luminescence lines has been given.
C02	`01`	`3`		`@0 001B70H55E`
C02	`02`	`3`		`@0 001B60A72V`
C03	`01`	`3`	`FRE`	`@0 Etude expérimentale @5 01`
C03	`01`	`3`	`ENG`	`@0 Experimental study @5 01`
C03	`02`	`3`	`FRE`	`@0 Semiconducteur II-VI @5 02`
C03	`02`	`3`	`ENG`	`@0 II-VI semiconductors @5 02`
C03	`03`	`3`	`FRE`	`@0 Matériau dopé @5 03`
C03	`03`	`3`	`ENG`	`@0 Doped materials @5 03`
C03	`04`	`3`	`FRE`	`@0 Photoluminescence @5 04`
C03	`04`	`3`	`ENG`	`@0 Photoluminescence @5 04`
C03	`05`	`3`	`FRE`	`@0 Addition thulium @5 05`
C03	`05`	`3`	`ENG`	`@0 Thulium additions @5 05`
C03	`06`	`3`	`FRE`	`@0 Zinc séléniure @2 NK @5 06`
C03	`06`	`3`	`ENG`	`@0 Zinc selenides @2 NK @5 06`
C03	`07`	`3`	`FRE`	`@0 Zinc sulfure @2 NK @5 07`
C03	`07`	`3`	`ENG`	`@0 Zinc sulfides @2 NK @5 07`
C03	`08`	`3`	`FRE`	`@0 Composé binaire @5 08`
C03	`08`	`3`	`ENG`	`@0 Binary compounds @5 08`
C03	`09`	`3`	`FRE`	`@0 Addition erbium @5 09`
C03	`09`	`3`	`ENG`	`@0 Erbium additions @5 09`
C03	`10`	`3`	`FRE`	`@0 7855E @2 PAC @4 INC @5 56`
C03	`11`	`3`	`FRE`	`@0 6172V @2 PAC @4 INC @5 57`
C03	`12`	`3`	`FRE`	`@0 ZnS:Tm @4 INC @5 92`
C03	`13`	`3`	`FRE`	`@0 ZnSe:Er @4 INC @5 93`
C03	`14`	`3`	`FRE`	`@0 Se Zn @4 INC @5 94`
C07	`01`	`3`	`FRE`	`@0 Composé minéral @5 16`
C07	`01`	`3`	`ENG`	`@0 Inorganic compounds @5 16`
C07	`02`	`3`	`FRE`	`@0 Métal transition composé @5 17`
C07	`02`	`3`	`ENG`	`@0 Transition element compounds @5 17`
N21				`@1 015`

A30	`01`	`1`	`ENG`	`@1 International Conference on II-VI Compounds @2 9 @3 Kyoto JPN @4 1999-11-01`

Links toward previous steps (curation, corpus...)

to stream Pascal, to step Corpus: Pour aller vers cette notice dans l'étape Curation :000E97

Links to Exploration step

Pascal:01-0024682

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">p-Type II-VI compounds doped by rare-earth elements</title>
<author><name sortKey="Georgobiani, A N" sort="Georgobiani, A N" uniqKey="Georgobiani A" first="A. N." last="Georgobiani">A. N. Georgobiani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute, Leninsky prospect 53</s1>
<s2>Moscow 117924</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
</affiliation>
</author>
<author><name sortKey="Kotljarevsky, M B" sort="Kotljarevsky, M B" uniqKey="Kotljarevsky M" first="M. B." last="Kotljarevsky">M. B. Kotljarevsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Kidalov, V V" sort="Kidalov, V V" uniqKey="Kidalov V" first="V. V." last="Kidalov">V. V. Kidalov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Rogozin, I V" sort="Rogozin, I V" uniqKey="Rogozin I" first="I. V." last="Rogozin">I. V. Rogozin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Aminov, U A" sort="Aminov, U A" uniqKey="Aminov U" first="U. A." last="Aminov">U. A. Aminov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute, Leninsky prospect 53</s1>
<s2>Moscow 117924</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">01-0024682</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 01-0024682 INIST</idno>
<idno type="RBID">Pascal:01-0024682</idno>
<idno type="wicri:Area/Pascal/Corpus">000E97</idno>
<idno type="wicri:Area/Pascal/Curation">000E97</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">p-Type II-VI compounds doped by rare-earth elements</title>
<author><name sortKey="Georgobiani, A N" sort="Georgobiani, A N" uniqKey="Georgobiani A" first="A. N." last="Georgobiani">A. N. Georgobiani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute, Leninsky prospect 53</s1>
<s2>Moscow 117924</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
</affiliation>
</author>
<author><name sortKey="Kotljarevsky, M B" sort="Kotljarevsky, M B" uniqKey="Kotljarevsky M" first="M. B." last="Kotljarevsky">M. B. Kotljarevsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Kidalov, V V" sort="Kidalov, V V" uniqKey="Kidalov V" first="V. V." last="Kidalov">V. V. Kidalov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Rogozin, I V" sort="Rogozin, I V" uniqKey="Rogozin I" first="I. V." last="Rogozin">I. V. Rogozin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
</affiliation>
</author>
<author><name sortKey="Aminov, U A" sort="Aminov, U A" uniqKey="Aminov U" first="U. A." last="Aminov">U. A. Aminov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute, Leninsky prospect 53</s1>
<s2>Moscow 117924</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of crystal growth</title>
<title level="j" type="abbreviated">J. cryst. growth</title>
<idno type="ISSN">0022-0248</idno>
<imprint><date when="2000">2000</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of crystal growth</title>
<title level="j" type="abbreviated">J. cryst. growth</title>
<idno type="ISSN">0022-0248</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Doped materials</term>
<term>Erbium additions</term>
<term>Experimental study</term>
<term>II-VI semiconductors</term>
<term>Photoluminescence</term>
<term>Thulium additions</term>
<term>Zinc selenides</term>
<term>Zinc sulfides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Semiconducteur II-VI</term>
<term>Matériau dopé</term>
<term>Photoluminescence</term>
<term>Addition thulium</term>
<term>Zinc séléniure</term>
<term>Zinc sulfure</term>
<term>Composé binaire</term>
<term>Addition erbium</term>
<term>7855E</term>
<term>6172V</term>
<term>ZnS:Tm</term>
<term>ZnSe:Er</term>
<term>Se Zn</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The luminescence of Tm<sup>3+</sup>
 in p-type ZnS and of Er<sup>3+</sup>
 in p-type ZnSe crystals have been investigated. The doping with rare-earth elements (REE) was performed by means of ion implantation in n-type materials. The post-implantation annealing of the radiation damages was performed in the atomic flux of VI group elements. The interaction of such a flux with the treated crystal leads also to the inversion of the conductivity of these semiconductors to p-type. It was found that in both cases REE occupy zinc sites. The interpretation of the corresponding luminescence lines has been given.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>214-15</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>p-Type II-VI compounds doped by rare-earth elements</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 9th international conference on II-VI compounds, Kyoto, Japan, 1-5 November 1999</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>GEORGOBIANI (A. N.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KOTLJAREVSKY (M. B.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KIDALOV (V. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ROGOZIN (I. V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>AMINOV (U. A.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>SUEMUNE (Ikuo)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>ISHIBASHI (Akira)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>P.N. Lebedev Physical Institute, Leninsky prospect 53</s1>
<s2>Moscow 117924</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Berdyansk Pedagogical Institute, Shmidt prospect 4</s1>
<s2>Berdyansk 332440</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Hokkaido University</s1>
<s2>Sapporo</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Sony Corp.</s1>
<s2>Yokohama</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>516-519</s1>
</fA20>
<fA21><s1>2000</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000089013091080</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2001 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>01-0024682</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The luminescence of Tm<sup>3+</sup>
 in p-type ZnS and of Er<sup>3+</sup>
 in p-type ZnSe crystals have been investigated. The doping with rare-earth elements (REE) was performed by means of ion implantation in n-type materials. The post-implantation annealing of the radiation damages was performed in the atomic flux of VI group elements. The interaction of such a flux with the treated crystal leads also to the inversion of the conductivity of these semiconductors to p-type. It was found that in both cases REE occupy zinc sites. The interpretation of the corresponding luminescence lines has been given.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55E</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60A72V</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>II-VI semiconductors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Zinc séléniure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Zinc selenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Zinc sulfure</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Zinc sulfides</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition erbium</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Erbium additions</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>7855E</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>6172V</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>ZnS:Tm</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>ZnSe:Er</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Se Zn</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>16</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0>
<s5>17</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>17</s5>
</fC07>
<fN21><s1>015</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on II-VI Compounds</s1>
<s2>9</s2>
<s3>Kyoto JPN</s3>
<s4>1999-11-01</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/ThuliumV1/Data/Pascal/Curation

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000E97 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Pascal/Curation/biblio.hfd -nk 000E97 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=    Wicri/Terre
   |area=    ThuliumV1
   |flux=    Pascal
   |étape=   Curation
   |type=    RBID
   |clé=     Pascal:01-0024682
   |texte=   p-Type II-VI compounds doped by rare-earth elements
}}

This area was generated with Dilib version V0.6.21.
Data generation: Thu May 12 08:27:09 2016. Site generation: Thu Mar 7 22:33:44 2024

	Serveur d'exploration sur le thulium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur le thulium

p-Type II-VI compounds doped by rare-earth elements

p-Type II-VI compounds doped by rare-earth elements

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri