Tm-doped disordered molybdate crystals for ultrafast mode-locked lasers
Identifieur interne :
000190 ( Pascal/Curation );
précédent :
000189;
suivant :
000191
Tm-doped disordered molybdate crystals for ultrafast mode-locked lasers
Auteurs : M. D. Serrano [
Espagne] ;
X. Han [
Espagne] ;
M. Rico [
Espagne] ;
C. Cascales [
Espagne] ;
C. Zaldo [
Espagne]
Source :
-
Proceedings of SPIE, the International Society for Optical Engineering [ 0277-786X ] ; 2011.
RBID : Pascal:12-0011735
Descripteurs français
- Pascal (Inist)
- Transition électronique,
Optique ultrarapide,
Laser mode bloqué,
Laser accordable,
Application laser,
Croissance cristalline en solution,
Télémétrie laser,
Puissance sortie,
Domaine temps fs,
Matériau laser,
Addition thulium,
Molybdate,
Application militaire,
0130C,
4262,
4270H,
4265R,
8920D.
English descriptors
- KwdEn :
- Crystal growth from solutions,
Electronic transition,
Laser beam applications,
Laser materials,
Laser ranging,
Military application,
Mode locked laser,
Molybdates,
Output power,
Thulium additions,
Tunable lasers,
Ultrafast optics,
fs range.
Abstract
5 at% Tm-doped NaGd(MoO4)2 laser crystal operated in CW conditions provided up to 641 mW of output power at λ≃ 1910 nm with a slope efficiency of 50.8% and a pump power laser threshold of 166 mW. 10 at% Tm-doped Li3Ba2Lu3(MoO4)8 laser operated in quasi-CW conditions provided up to 510 mW of output power at λ≃ 1950 nm with a slope efficiency of 71.4% and a pump power laser threshold of 125 mW. Both crystals were grown by the Top Seeded Solution Growth method at about two hundreds degrees below their melting points. The structural disorder of these crystals confers inhomogenous broadening to the Tm3+ electronic transitions. Slightly broader laser tuning range and laser emission bandwidths are observed in the Li3Ba2Lu3(MoO4)8 crystal despite of the lower expected degree of crystalline disorder. The crystals are promising for the development of mode locked ultrafast (fs) lasers with emission close to λ= 2 μm.
| pA |
| A01 | 01 | 1 | | @0 0277-786X |
|---|
| A02 | 01 | | | @0 PSISDG |
|---|
| A03 | | 1 | | @0 Proc. SPIE Int. Soc. Opt. Eng. |
|---|
| A05 | | | | @2 8039 |
|---|
| A08 | 01 | 1 | ENG | @1 Tm-doped disordered molybdate crystals for ultrafast mode-locked lasers |
|---|
| A09 | 01 | 1 | ENG | @1 Laser technology for defense and security VII : 25-27 April 2011, Orlando, Florida, United States |
|---|
| A11 | 01 | 1 | | @1 SERRANO (M. D.) |
|---|
| A11 | 02 | 1 | | @1 HAN (X.) |
|---|
| A11 | 03 | 1 | | @1 RICO (M.) |
|---|
| A11 | 04 | 1 | | @1 CASCALES (C.) |
|---|
| A11 | 05 | 1 | | @1 ZALDO (C.) |
|---|
| A12 | 01 | 1 | | @1 DUBINSKII (Mark A.) @9 ed. |
|---|
| A12 | 02 | 1 | | @1 POST (Stephen G.) @9 ed. |
|---|
| A14 | 01 | | | @1 Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3 @2 28049 Madrid @3 ESP @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut. |
|---|
| A18 | 01 | 1 | | @1 SPIE @3 USA @9 org-cong. |
|---|
| A20 | | | | @2 803904.1-803904.7 |
|---|
| A21 | | | | @1 2011 |
|---|
| A23 | 01 | | | @0 ENG |
|---|
| A25 | 01 | | | @1 SPIE @2 Bellingham WA |
|---|
| A26 | 01 | | | @0 978-0-8194-8613-4 |
|---|
| A43 | 01 | | | @1 INIST @2 21760 @5 354000174755190030 |
|---|
| A44 | | | | @0 0000 @1 © 2012 INIST-CNRS. All rights reserved. |
|---|
| A45 | | | | @0 14 ref. |
|---|
| A47 | 01 | 1 | | @0 12-0011735 |
|---|
| A60 | | | | @1 P @2 C |
|---|
| A61 | | | | @0 A |
|---|
| A64 | 01 | 1 | | @0 Proceedings of SPIE, the International Society for Optical Engineering |
|---|
| A66 | 01 | | | @0 USA |
|---|
| C01 | 01 | | ENG | @0 5 at% Tm-doped NaGd(MoO4)2 laser crystal operated in CW conditions provided up to 641 mW of output power at λ≃ 1910 nm with a slope efficiency of 50.8% and a pump power laser threshold of 166 mW. 10 at% Tm-doped Li3Ba2Lu3(MoO4)8 laser operated in quasi-CW conditions provided up to 510 mW of output power at λ≃ 1950 nm with a slope efficiency of 71.4% and a pump power laser threshold of 125 mW. Both crystals were grown by the Top Seeded Solution Growth method at about two hundreds degrees below their melting points. The structural disorder of these crystals confers inhomogenous broadening to the Tm3+ electronic transitions. Slightly broader laser tuning range and laser emission bandwidths are observed in the Li3Ba2Lu3(MoO4)8 crystal despite of the lower expected degree of crystalline disorder. The crystals are promising for the development of mode locked ultrafast (fs) lasers with emission close to λ= 2 μm. |
|---|
| C02 | 01 | 3 | | @0 001B00A30C |
|---|
| C02 | 02 | 3 | | @0 001B40B62 |
|---|
| C02 | 03 | 3 | | @0 001B40B70H |
|---|
| C02 | 04 | 3 | | @0 001B40B65R |
|---|
| C03 | 01 | X | FRE | @0 Transition électronique @5 03 |
|---|
| C03 | 01 | X | ENG | @0 Electronic transition @5 03 |
|---|
| C03 | 01 | X | SPA | @0 Transición electrónica @5 03 |
|---|
| C03 | 02 | 3 | FRE | @0 Optique ultrarapide @5 04 |
|---|
| C03 | 02 | 3 | ENG | @0 Ultrafast optics @5 04 |
|---|
| C03 | 03 | X | FRE | @0 Laser mode bloqué @5 11 |
|---|
| C03 | 03 | X | ENG | @0 Mode locked laser @5 11 |
|---|
| C03 | 03 | X | SPA | @0 Laser modo bloqueado @5 11 |
|---|
| C03 | 04 | 3 | FRE | @0 Laser accordable @5 12 |
|---|
| C03 | 04 | 3 | ENG | @0 Tunable lasers @5 12 |
|---|
| C03 | 05 | 3 | FRE | @0 Application laser @5 19 |
|---|
| C03 | 05 | 3 | ENG | @0 Laser beam applications @5 19 |
|---|
| C03 | 06 | 3 | FRE | @0 Croissance cristalline en solution @5 30 |
|---|
| C03 | 06 | 3 | ENG | @0 Crystal growth from solutions @5 30 |
|---|
| C03 | 07 | 3 | FRE | @0 Télémétrie laser @5 31 |
|---|
| C03 | 07 | 3 | ENG | @0 Laser ranging @5 31 |
|---|
| C03 | 08 | X | FRE | @0 Puissance sortie @5 41 |
|---|
| C03 | 08 | X | ENG | @0 Output power @5 41 |
|---|
| C03 | 08 | X | SPA | @0 Potencia salida @5 41 |
|---|
| C03 | 09 | 3 | FRE | @0 Domaine temps fs @5 42 |
|---|
| C03 | 09 | 3 | ENG | @0 fs range @5 42 |
|---|
| C03 | 10 | 3 | FRE | @0 Matériau laser @5 57 |
|---|
| C03 | 10 | 3 | ENG | @0 Laser materials @5 57 |
|---|
| C03 | 11 | 3 | FRE | @0 Addition thulium @5 61 |
|---|
| C03 | 11 | 3 | ENG | @0 Thulium additions @5 61 |
|---|
| C03 | 12 | 3 | FRE | @0 Molybdate @2 NA @5 62 |
|---|
| C03 | 12 | 3 | ENG | @0 Molybdates @2 NA @5 62 |
|---|
| C03 | 13 | X | FRE | @0 Application militaire @5 63 |
|---|
| C03 | 13 | X | ENG | @0 Military application @5 63 |
|---|
| C03 | 13 | X | SPA | @0 Aplicación militar @5 63 |
|---|
| C03 | 14 | 3 | FRE | @0 0130C @4 INC @5 83 |
|---|
| C03 | 15 | 3 | FRE | @0 4262 @4 INC @5 84 |
|---|
| C03 | 16 | 3 | FRE | @0 4270H @4 INC @5 91 |
|---|
| C03 | 17 | 3 | FRE | @0 4265R @4 INC @5 92 |
|---|
| C03 | 18 | 3 | FRE | @0 8920D @4 INC @5 93 |
|---|
| N21 | | | | @1 002 |
|---|
| N44 | 01 | | | @1 OTO |
|---|
| N82 | | | | @1 OTO |
|---|
|
|---|
| pR |
| A30 | 01 | 1 | ENG | @1 Laser technology for defense and security. Conference @2 07 @3 Orlando FL USA @4 2011-04-25 |
|---|
|
|---|
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Le document en format XML
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<sZ>1 aut.</sZ>
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</publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Tm-doped disordered molybdate crystals for ultrafast mode-locked lasers</title>
<author><name sortKey="Serrano, M D" sort="Serrano, M D" uniqKey="Serrano M" first="M. D." last="Serrano">M. D. Serrano</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>Espagne</country>
</affiliation><author><name sortKey="Han, X" sort="Han, X" uniqKey="Han X" first="X." last="Han">X. Han</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>Espagne</country>
</affiliation><author><name sortKey="Rico, M" sort="Rico, M" uniqKey="Rico M" first="M." last="Rico">M. Rico</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>Espagne</country>
</affiliation><author><name sortKey="Cascales, C" sort="Cascales, C" uniqKey="Cascales C" first="C." last="Cascales">C. Cascales</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>Espagne</country>
</affiliation><author><name sortKey="Zaldo, C" sort="Zaldo, C" uniqKey="Zaldo C" first="C." last="Zaldo">C. Zaldo</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14><country>Espagne</country>
</affiliation><series><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<idno type="ISSN">0277-786X</idno>
<imprint><date when="2011">2011</date>
</imprint><seriesStmt><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<idno type="ISSN">0277-786X</idno>
</seriesStmt><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from solutions</term>
<term>Electronic transition</term>
<term>Laser beam applications</term>
<term>Laser materials</term>
<term>Laser ranging</term>
<term>Military application</term>
<term>Mode locked laser</term>
<term>Molybdates</term>
<term>Output power</term>
<term>Thulium additions</term>
<term>Tunable lasers</term>
<term>Ultrafast optics</term>
<term>fs range</term>
</keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transition électronique</term>
<term>Optique ultrarapide</term>
<term>Laser mode bloqué</term>
<term>Laser accordable</term>
<term>Application laser</term>
<term>Croissance cristalline en solution</term>
<term>Télémétrie laser</term>
<term>Puissance sortie</term>
<term>Domaine temps fs</term>
<term>Matériau laser</term>
<term>Addition thulium</term>
<term>Molybdate</term>
<term>Application militaire</term>
<term>0130C</term>
<term>4262</term>
<term>4270H</term>
<term>4265R</term>
<term>8920D</term>
</keywords><front><div type="abstract" xml:lang="en">5 at% Tm-doped NaGd(MoO<sub>4</sub>
)<sub>2</sub>
laser crystal operated in CW conditions provided up to 641 mW of output power at λ≃ 1910 nm with a slope efficiency of 50.8% and a pump power laser threshold of 166 mW. 10 at% Tm-doped Li<sub>3</sub>
Ba<sub>2</sub>
Lu<sub>3</sub>
(MoO<sub>4</sub>
)<sub>8</sub>
laser operated in quasi-CW conditions provided up to 510 mW of output power at λ≃ 1950 nm with a slope efficiency of 71.4% and a pump power laser threshold of 125 mW. Both crystals were grown by the Top Seeded Solution Growth method at about two hundreds degrees below their melting points. The structural disorder of these crystals confers inhomogenous broadening to the Tm<sup>3+</sup>
electronic transitions. Slightly broader laser tuning range and laser emission bandwidths are observed in the Li<sub>3</sub>
Ba<sub>2</sub>
Lu<sub>3</sub>
(MoO<sub>4</sub>
)<sub>8</sub>
crystal despite of the lower expected degree of crystalline disorder. The crystals are promising for the development of mode locked ultrafast (fs) lasers with emission close to λ= 2 μm.</div><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0>
</fA01><fA02 i1="01"><s0>PSISDG</s0>
</fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0>
</fA03><fA05><s2>8039</s2>
</fA05><fA08 i1="01" i2="1" l="ENG"><s1>Tm-doped disordered molybdate crystals for ultrafast mode-locked lasers</s1>
</fA08><fA09 i1="01" i2="1" l="ENG"><s1>Laser technology for defense and security VII : 25-27 April 2011, Orlando, Florida, United States</s1>
</fA09><fA11 i1="01" i2="1"><s1>SERRANO (M. D.)</s1>
</fA11><fA11 i1="02" i2="1"><s1>HAN (X.)</s1>
</fA11><fA11 i1="03" i2="1"><s1>RICO (M.)</s1>
</fA11><fA11 i1="04" i2="1"><s1>CASCALES (C.)</s1>
</fA11><fA11 i1="05" i2="1"><s1>ZALDO (C.)</s1>
</fA11><fA12 i1="01" i2="1"><s1>DUBINSKII (Mark A.)</s1>
<s9>ed.</s9>
</fA12><fA12 i1="02" i2="1"><s1>POST (Stephen G.)</s1>
<s9>ed.</s9>
</fA12><fA14 i1="01"><s1>Instituto de Ciencia de Materiales de Madrid. Consejo Superior de Investigaciones Científicas. c/ Sor Juana Ines de la Cruz 3</s1>
<s2>28049 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14><fA18 i1="01" i2="1"><s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18><fA20><s2>803904.1-803904.7</s2>
</fA20><fA21><s1>2011</s1>
</fA21><fA23 i1="01"><s0>ENG</s0>
</fA23><fA25 i1="01"><s1>SPIE</s1>
<s2>Bellingham WA</s2>
</fA25><fA26 i1="01"><s0>978-0-8194-8613-4</s0>
</fA26><fA43 i1="01"><s1>INIST</s1>
<s2>21760</s2>
<s5>354000174755190030</s5>
</fA43><fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44><fA45><s0>14 ref.</s0>
</fA45><fA47 i1="01" i2="1"><s0>12-0011735</s0>
</fA47><fA60><s1>P</s1>
<s2>C</s2>
</fA60><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0>
</fA64><fA66 i1="01"><s0>USA</s0>
</fA66><fC01 i1="01" l="ENG"><s0>5 at% Tm-doped NaGd(MoO<sub>4</sub>
)<sub>2</sub>
laser crystal operated in CW conditions provided up to 641 mW of output power at λ≃ 1910 nm with a slope efficiency of 50.8% and a pump power laser threshold of 166 mW. 10 at% Tm-doped Li<sub>3</sub>
Ba<sub>2</sub>
Lu<sub>3</sub>
(MoO<sub>4</sub>
)<sub>8</sub>
laser operated in quasi-CW conditions provided up to 510 mW of output power at λ≃ 1950 nm with a slope efficiency of 71.4% and a pump power laser threshold of 125 mW. Both crystals were grown by the Top Seeded Solution Growth method at about two hundreds degrees below their melting points. The structural disorder of these crystals confers inhomogenous broadening to the Tm<sup>3+</sup>
electronic transitions. Slightly broader laser tuning range and laser emission bandwidths are observed in the Li<sub>3</sub>
Ba<sub>2</sub>
Lu<sub>3</sub>
(MoO<sub>4</sub>
)<sub>8</sub>
crystal despite of the lower expected degree of crystalline disorder. The crystals are promising for the development of mode locked ultrafast (fs) lasers with emission close to λ= 2 μm.</s0><fC02 i1="01" i2="3"><s0>001B00A30C</s0>
</fC02><fC02 i1="02" i2="3"><s0>001B40B62</s0>
</fC02><fC02 i1="03" i2="3"><s0>001B40B70H</s0>
</fC02><fC02 i1="04" i2="3"><s0>001B40B65R</s0>
</fC02><fC03 i1="01" i2="X" l="FRE"><s0>Transition électronique</s0>
<s5>03</s5>
</fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electronic transition</s0>
<s5>03</s5>
</fC03><fC03 i1="01" i2="X" l="SPA"><s0>Transición electrónica</s0>
<s5>03</s5>
</fC03><fC03 i1="02" i2="3" l="FRE"><s0>Optique ultrarapide</s0>
<s5>04</s5>
</fC03><fC03 i1="02" i2="3" l="ENG"><s0>Ultrafast optics</s0>
<s5>04</s5>
</fC03><fC03 i1="03" i2="X" l="FRE"><s0>Laser mode bloqué</s0>
<s5>11</s5>
</fC03><fC03 i1="03" i2="X" l="ENG"><s0>Mode locked laser</s0>
<s5>11</s5>
</fC03><fC03 i1="03" i2="X" l="SPA"><s0>Laser modo bloqueado</s0>
<s5>11</s5>
</fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser accordable</s0>
<s5>12</s5>
</fC03><fC03 i1="04" i2="3" l="ENG"><s0>Tunable lasers</s0>
<s5>12</s5>
</fC03><fC03 i1="05" i2="3" l="FRE"><s0>Application laser</s0>
<s5>19</s5>
</fC03><fC03 i1="05" i2="3" l="ENG"><s0>Laser beam applications</s0>
<s5>19</s5>
</fC03><fC03 i1="06" i2="3" l="FRE"><s0>Croissance cristalline en solution</s0>
<s5>30</s5>
</fC03><fC03 i1="06" i2="3" l="ENG"><s0>Crystal growth from solutions</s0>
<s5>30</s5>
</fC03><fC03 i1="07" i2="3" l="FRE"><s0>Télémétrie laser</s0>
<s5>31</s5>
</fC03><fC03 i1="07" i2="3" l="ENG"><s0>Laser ranging</s0>
<s5>31</s5>
</fC03><fC03 i1="08" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>41</s5>
</fC03><fC03 i1="08" i2="X" l="ENG"><s0>Output power</s0>
<s5>41</s5>
</fC03><fC03 i1="08" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>41</s5>
</fC03><fC03 i1="09" i2="3" l="FRE"><s0>Domaine temps fs</s0>
<s5>42</s5>
</fC03><fC03 i1="09" i2="3" l="ENG"><s0>fs range</s0>
<s5>42</s5>
</fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>57</s5>
</fC03><fC03 i1="10" i2="3" l="ENG"><s0>Laser materials</s0>
<s5>57</s5>
</fC03><fC03 i1="11" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>61</s5>
</fC03><fC03 i1="11" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>61</s5>
</fC03><fC03 i1="12" i2="3" l="FRE"><s0>Molybdate</s0>
<s2>NA</s2>
<s5>62</s5>
</fC03><fC03 i1="12" i2="3" l="ENG"><s0>Molybdates</s0>
<s2>NA</s2>
<s5>62</s5>
</fC03><fC03 i1="13" i2="X" l="FRE"><s0>Application militaire</s0>
<s5>63</s5>
</fC03><fC03 i1="13" i2="X" l="ENG"><s0>Military application</s0>
<s5>63</s5>
</fC03><fC03 i1="13" i2="X" l="SPA"><s0>Aplicación militar</s0>
<s5>63</s5>
</fC03><fC03 i1="14" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03><fC03 i1="15" i2="3" l="FRE"><s0>4262</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03><fC03 i1="16" i2="3" l="FRE"><s0>4270H</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03><fC03 i1="17" i2="3" l="FRE"><s0>4265R</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03><fC03 i1="18" i2="3" l="FRE"><s0>8920D</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03><fN21><s1>002</s1>
</fN21><fN44 i1="01"><s1>OTO</s1>
</fN44><fN82><s1>OTO</s1>
</fN82><pR><fA30 i1="01" i2="1" l="ENG"><s1>Laser technology for defense and security. Conference</s1>
<s2>07</s2>
<s3>Orlando FL USA</s3>
<s4>2011-04-25</s4>
</fA30>
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