Luminescence processes in Tm3+ - and Er3+-ion-activated, Yb3+-ion-sensitized infrared upconversion devices
Identifieur interne : 001836 ( Pascal/Corpus ); précédent : 001835; suivant : 001837Luminescence processes in Tm3+ - and Er3+-ion-activated, Yb3+-ion-sensitized infrared upconversion devices
Auteurs : Y. Mita ; K. Hirama ; N. Ando ; H. Yamamoto ; S. ShionoyaSource :
- Journal of applied physics [ 0021-8979 ] ; 1993.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Frequency upconversion characteristics in Er3+- or Tm3+-ion-activated and Yb3+-ion-sensitized luminescent materials have been investigated. The principal goal was to obtain high-brightness, blue and green light sources under 980 nm emitting laser diode light excitation. Processes leading to the efficient upconversion have been investigated both by experimental and analytical methods. It has been shown that upconversion efficiencies are principally determined with Yb3+ ion excited state lifetime, which is highly influenced by device optical confinement as well as material characteristics
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Format Inist (serveur)
NO : | PASCAL 94-0230222 INIST |
---|---|
ET : | Luminescence processes in Tm3+ - and Er3+-ion-activated, Yb3+-ion-sensitized infrared upconversion devices |
AU : | MITA (Y.); HIRAMA (K.); ANDO (N.); YAMAMOTO (H.); SHIONOYA (S.) |
AF : | Tokyo eng. univ., dep. electronics/1404 Katakura, Hachioji 192/Japon |
DT : | Publication en série; Niveau analytique |
SO : | Journal of applied physics; ISSN 0021-8979; Coden JAPIAU; Etats-Unis; Da. 1993; Vol. 74; No. 7; Pp. 4703-4709; Bibl. 25 ref. |
LA : | Anglais |
EA : | Frequency upconversion characteristics in Er3+- or Tm3+-ion-activated and Yb3+-ion-sensitized luminescent materials have been investigated. The principal goal was to obtain high-brightness, blue and green light sources under 980 nm emitting laser diode light excitation. Processes leading to the efficient upconversion have been investigated both by experimental and analytical methods. It has been shown that upconversion efficiencies are principally determined with Yb3+ ion excited state lifetime, which is highly influenced by device optical confinement as well as material characteristics |
CC : | 001B40B72B |
FD : | Conversion fréquence; Source rayonnement; Ytterbium ion; Erbium ion; Thulium ion; Lumière verte; Lumière bleue; Rayonnement visible; Etude expérimentale; Etude théorique; Luminescence; 4272B |
ED : | Frequency conversion; Radiation sources; Ytterbium ions; Erbium ions; Thulium ions; Green light; Blue light; Visible radiation; Experimental study; Theoretical study; Luminescence |
SD : | Conversión frecuencia; Luz verde; Luz azul |
LO : | INIST-126.354000048132840590 |
ID : | 94-0230222 |
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Pascal:94-0230222Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Luminescence processes in Tm<sup>3+</sup>
- and Er<sup>3+</sup>
-ion-activated, Yb<sup>3+</sup>
-ion-sensitized infrared upconversion devices</title>
<author><name sortKey="Mita, Y" sort="Mita, Y" uniqKey="Mita Y" first="Y." last="Mita">Y. Mita</name>
<affiliation><inist:fA14 i1="01"><s1>Tokyo eng. univ., dep. electronics</s1>
<s2>1404 Katakura, Hachioji 192</s2>
<s3>JPN</s3>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Hirama, K" sort="Hirama, K" uniqKey="Hirama K" first="K." last="Hirama">K. Hirama</name>
</author>
<author><name sortKey="Ando, N" sort="Ando, N" uniqKey="Ando N" first="N." last="Ando">N. Ando</name>
</author>
<author><name sortKey="Yamamoto, H" sort="Yamamoto, H" uniqKey="Yamamoto H" first="H." last="Yamamoto">H. Yamamoto</name>
</author>
<author><name sortKey="Shionoya, S" sort="Shionoya, S" uniqKey="Shionoya S" first="S." last="Shionoya">S. Shionoya</name>
</author>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Luminescence processes in Tm<sup>3+</sup>
- and Er<sup>3+</sup>
-ion-activated, Yb<sup>3+</sup>
-ion-sensitized infrared upconversion devices</title>
<author><name sortKey="Mita, Y" sort="Mita, Y" uniqKey="Mita Y" first="Y." last="Mita">Y. Mita</name>
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<s3>JPN</s3>
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<author><name sortKey="Hirama, K" sort="Hirama, K" uniqKey="Hirama K" first="K." last="Hirama">K. Hirama</name>
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<author><name sortKey="Ando, N" sort="Ando, N" uniqKey="Ando N" first="N." last="Ando">N. Ando</name>
</author>
<author><name sortKey="Yamamoto, H" sort="Yamamoto, H" uniqKey="Yamamoto H" first="H." last="Yamamoto">H. Yamamoto</name>
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<author><name sortKey="Shionoya, S" sort="Shionoya, S" uniqKey="Shionoya S" first="S." last="Shionoya">S. Shionoya</name>
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<series><title level="j" type="main">Journal of applied physics</title>
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<term>Luminescence</term>
<term>Radiation sources</term>
<term>Theoretical study</term>
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<term>Lumière bleue</term>
<term>Rayonnement visible</term>
<term>Etude expérimentale</term>
<term>Etude théorique</term>
<term>Luminescence</term>
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<front><div type="abstract" xml:lang="en">Frequency upconversion characteristics in Er<sup>3+</sup>
- or Tm<sup>3+</sup>
-ion-activated and Yb<sup>3+</sup>
-ion-sensitized luminescent materials have been investigated. The principal goal was to obtain high-brightness, blue and green light sources under 980 nm emitting laser diode light excitation. Processes leading to the efficient upconversion have been investigated both by experimental and analytical methods. It has been shown that upconversion efficiencies are principally determined with Yb<sup>3+</sup>
ion excited state lifetime, which is highly influenced by device optical confinement as well as material characteristics</div>
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- and Er<sup>3+</sup>
-ion-activated, Yb<sup>3+</sup>
-ion-sensitized infrared upconversion devices</s1>
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- or Tm<sup>3+</sup>
-ion-activated and Yb<sup>3+</sup>
-ion-sensitized luminescent materials have been investigated. The principal goal was to obtain high-brightness, blue and green light sources under 980 nm emitting laser diode light excitation. Processes leading to the efficient upconversion have been investigated both by experimental and analytical methods. It has been shown that upconversion efficiencies are principally determined with Yb<sup>3+</sup>
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<server><NO>PASCAL 94-0230222 INIST</NO>
<ET>Luminescence processes in Tm<sup>3+</sup>
- and Er<sup>3+</sup>
-ion-activated, Yb<sup>3+</sup>
-ion-sensitized infrared upconversion devices</ET>
<AU>MITA (Y.); HIRAMA (K.); ANDO (N.); YAMAMOTO (H.); SHIONOYA (S.)</AU>
<AF>Tokyo eng. univ., dep. electronics/1404 Katakura, Hachioji 192/Japon</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of applied physics; ISSN 0021-8979; Coden JAPIAU; Etats-Unis; Da. 1993; Vol. 74; No. 7; Pp. 4703-4709; Bibl. 25 ref.</SO>
<LA>Anglais</LA>
<EA>Frequency upconversion characteristics in Er<sup>3+</sup>
- or Tm<sup>3+</sup>
-ion-activated and Yb<sup>3+</sup>
-ion-sensitized luminescent materials have been investigated. The principal goal was to obtain high-brightness, blue and green light sources under 980 nm emitting laser diode light excitation. Processes leading to the efficient upconversion have been investigated both by experimental and analytical methods. It has been shown that upconversion efficiencies are principally determined with Yb<sup>3+</sup>
ion excited state lifetime, which is highly influenced by device optical confinement as well as material characteristics</EA>
<CC>001B40B72B</CC>
<FD>Conversion fréquence; Source rayonnement; Ytterbium ion; Erbium ion; Thulium ion; Lumière verte; Lumière bleue; Rayonnement visible; Etude expérimentale; Etude théorique; Luminescence; 4272B</FD>
<ED>Frequency conversion; Radiation sources; Ytterbium ions; Erbium ions; Thulium ions; Green light; Blue light; Visible radiation; Experimental study; Theoretical study; Luminescence</ED>
<SD>Conversión frecuencia; Luz verde; Luz azul</SD>
<LO>INIST-126.354000048132840590</LO>
<ID>94-0230222</ID>
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